March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
Features
48A, 60V. R
DS(ON)
= 0.025
Ω
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
DGR
V
GSS
I
D
Parameter
Drain-Source Voltage
T
C
= 25°C unless otherwise noted
NDP6060
60
60
± 20
± 40
o
NDB6060
Units
V
V
V
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
T
c
=25 C
T
C
=100
o
C
48
32
144
100
0.67
-65 to 175
275
A
- Continuous
- Pulsed
P
D
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
W
W/°C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP6060 Rev. B1 / NDB6060 Rev. C
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
I
D(on)
g
FS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 48 A
200
48
mJ
A
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 24 A
T
J
= 125°C
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 24 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
48
10
19
2
1.4
2.9
2.3
0.02
0.032
60
250
1
100
-100
V
µA
mA
nA
nA
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
4
3.6
0.025
0.04
A
S
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1190
475
150
1800
800
400
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 48 V,
I
D
= 48 A, V
GS
= 10V
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 10 V, R
GEN
= 7.5
Ω
10
145
28
77
39
7.6
22
20
300
60
150
70
nS
nS
nS
nS
nC
nC
nC
NDP6060 Rev. B1 / NDB6060 Rev. C
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 24 A
(Note 1)
T
J
= 125°C
t
rr
I
rr
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V, I
F
= 48 A,
dI
F
/dt = 100 A/µs
35
2
0.9
0.8
87
3.6
48
144
1.3
1.2
140
8
ns
A
A
A
V
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.5
62.5
°C/W
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6060 Rev. B1 / NDB6060 Rev. C
Typical Electrical Characteristics
100
2
V
GS
= 20V
I
D
, DRAIN-SOURCE CURRENT (A)
80
12
10
DRAIN-SOURCE ON-RESISTANCE
9.0
8.0
R
DS(on)
, NORMALIZED
1.8
1.6
1.4
V
GS
= 6.0V
7.0
8.0
9.0
60
7.0
40
1.2
1
0.8
0.6
10
12
20
6.0
20
5.0
0
0
1
V
DS
2
3
4
, DRAIN-SOURCE VOLTAGE (V)
5
6
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
2
2.5
V
GS
= 10V
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
I
D
= 24A
2
V
GS
= 10V
TJ = 125°C
R
DS(ON)
, NORMALIZED
1.5
1.25
1.5
1
25°C
1
0.75
-55°C
0.5
0.5
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
0
20
40
60
80
100
I
D
, DRAIN CURRENT (A)
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
60
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= 10V
50
I
D
, DRAIN CURRENT (A)
T = -55°C
J
125°C
25°C
V
GS(th)
, NORMALIZED
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
V
DS
= V
GS
I
D
= 250µA
40
30
20
10
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
150
175
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
NDP6060 Rev. B1 / NDB6060 Rev. C
Typical Electrical Characteristics
(continued)
1.15
BV
DSS
, NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
60
I
D
= 250µA
10
I
S
, REVERSE DRAIN CURRENT (A)
1.1
V
GS
= 0V
1
T J = 125°C
1.05
25°C
-55°C
0.1
1
0.01
0.95
0.001
0.9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
0.0001
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Breakdown Voltage Variation with
Temperature
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
3000
2000
V
GS
, GATE-SOURCE VOLTAGE (V)
20
I
D
= 48A
Ciss
15
V
DS
= 12V
48V
24V
CAPACITANCE (pF)
1000
500
300
Coss
10
f = 1 MHz
200
5
V
GS
= 0 V
Crss
100
1
2
V
DS
0
3
5
10
20
30
50
0
20
, DRAIN TO SOURCE VOLTAGE (V)
40
Q
g
, GATE CHARGE (nC)
60
80
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V
DD
t
d(on)
t
on
t
r
90%
t
o f f
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
V
GS
V
O U T
10%
10%
INVERTED
R
GEN
G
90%
V
IN
S
10%
50%
50%
PULSE W IDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
NDP6060 Rev. B1 / NDB6060 Rev. C
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