SKM150GB12V
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 720 V
V
GE
≤
20 V
V
CES
≤
1200 V
T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
231
176
150
450
-20 ... 20
T
j
= 125 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
189
141
150
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
450
900
-40 ... 175
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
200
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMITRANS 2
®
V
GES
t
psc
T
j
I
F
I
Fnom
Inverse diode
SKM150GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
T
j
= 175 °C
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Conditions
I
C
= 150 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 6 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
V
CC
= 600 V
I
C
= 150 A
V
GE
= ±15 V
R
G on
= 1.5
R
G off
= 1.5
di/dt
on
= 4400 A/µs
di/dt
off
= 1800 A/µs
du/dt
off
= 8100 V/
µs
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.75
2.20
0.94
0.88
5.40
8.80
max.
2.20
2.50
1.04
0.98
7.7
10.13
6.5
0.3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
5.5
6
0.1
9
0.89
0.884
1650
5.0
258
32
13.5
388
62
14.2
0.19
K/W
GB
© by SEMIKRON
Rev. 4 – 23.03.2011
1
SKM150GB12V
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
I
F
= 150 A
T
j
= 150 °C
di/dt
off
= 5500 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 150 °C
min.
typ.
2.14
2.07
1.3
0.9
5.6
7.8
160
21.5
8.9
max.
2.46
2.38
1.5
1.1
6.4
8.5
Unit
V
V
V
V
m
m
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 150 A
V
GE
= 0 V
chip
V
F0
SEMITRANS
®
2
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
0.31
30
K/W
nH
m
m
SKM150GB12V
Features
• V-IGBT = 6. Generation Trench V-IGBT
(Fuji)
• CAL4 = Soft switching 4. Generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt
terminal-chip
per module
to heat sink M6
T
C
= 25 °C
T
C
= 125 °C
3
to terminals M5
2.5
0.65
1
0.04
0.05
5
5
160
R
th(c-s)
M
s
M
t
w
K/W
Nm
Nm
Nm
g
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Remarks
• Case temperature limited to
T
c
= 125°C max, recomm.
T
op
= -40 ... +150°C, product
rel. results valid for T
j
= 150°
GB
2
Rev. 4 – 23.03.2011
© by SEMIKRON
SKM150GB12V
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 23.03.2011
3
SKM150GB12V
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 4 – 23.03.2011
© by SEMIKRON
SKM150GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 23.03.2011
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
