F5016H,F5016H pdf中文资料,F5016H引脚图,F5016H电路-Datasheet-电子工程世界

F5016H: 产品描述Power Field-Effect Transistor, 3A I(D), 60V, 0.16ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F5, 5 PIN; 产品类别分立半导体晶体管; 文件大小41KB，共1页; 制造商Fuji Electric Co Ltd

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F5016H概述

Power Field-Effect Transistor, 3A I(D), 60V, 0.16ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F5, 5 PIN

F5016H规格参数

参数名称	属性值
厂商名称	Fuji Electric Co Ltd
零件包装代码	TO-220AB
包装说明	FLANGE MOUNT, R-PSFM-T5
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	ISOLATED
最小漏源击穿电压	60 V
最大漏极电流 (ID)	3 A
最大漏源导通电阻	0.16 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T5
端子数量	5
工作模式	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON

F5016H相似产品对比

	F5016H	F5030	F9221	F5022	F9206	F9211	F9210	F9209	F5029
描述	Power Field-Effect Transistor, 3A I(D), 60V, 0.16ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F5, 5 PIN	Power Field-Effect Transistor, 18A I(D), 40V, 0.07ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TPACK-3	Power Field-Effect Transistor, 500V, 0.9ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPD-12	Power Field-Effect Transistor, 3A I(D), 70V, 0.55ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3	Power Field-Effect Transistor, 700V, 1.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPD-7	Power Field-Effect Transistor, 800V, 1.1ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPD-7	Power Field-Effect Transistor, 700V, 1.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPD-7	Power Field-Effect Transistor, 700V, 0.6ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPD-7	Power Field-Effect Transistor, 18A I(D), 40V, 0.07ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
针数	3	3	12	3	7	7	7	7	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
最小漏源击穿电压	60 V	40 V	500 V	70 V	700 V	800 V	700 V	700 V	40 V
最大漏源导通电阻	0.16 Ω	0.07 Ω	0.9 Ω	0.55 Ω	1.2 Ω	1.1 Ω	1.2 Ω	0.6 Ω	0.07 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Fuji Electric Co Ltd	Fuji Electric Co Ltd	Fuji Electric Co Ltd	-	Fuji Electric Co Ltd	Fuji Electric Co Ltd	Fuji Electric Co Ltd	Fuji Electric Co Ltd	Fuji Electric Co Ltd
晶体管应用	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-

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