Freescale Semiconductor
Technical Data
Document Number: MD8IC970N
Rev. 2, 5/2011
RF LDMOS Wideband Integrated
Power Amplifiers
The MD8IC970N wideband integrated circuit is designed with on--chip
prematching that makes it usable from 136 to 940 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical base station
modulation formats. This device has a 2--stage design with off--chip matching
for the input, interstage and output networks to cover the desired frequency
sub--band.
•
Typical Two--Tone Performance: V
DD1
= 28 Volts, V
DD2
= 25 Volts,
I
DQ1(A+B)
= 60 mA, I
DQ2(A+B)
= 550 mA, P
out
= 35 Watts Avg.
Frequency
850 MHz
900 MHz
940 MHz
G
ps
(dB)
30.6
31.9
32.6
PAE
(%)
40.1
42.4
42.1
IMD
(dBc)
--30.5
--31.0
--31.3
MD8IC970NR1
MD8IC970GNR1
850-
-940 MHz, 35 W AVG., 28 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 137 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Typical P
out
@ 1 dB Compression Point
≃
79 Watts CW
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
On--Chip Prematching. On--Chip Stabilization.
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
RF
in2A
RF
out1A
/V
D1A
V
G1A
RF
in1A
V
G2A
Quiescent Current
Temperature Compensation
(1)
RF
out2A
/V
D2A
CASE 1866-
-02
TO-
-270 WBL-
-16
PLASTIC
MD8IC970NR1
CASE 1867-
-02
TO-
-270 WBL-
-16 GULL
PLASTIC
MD8IC970GNR1
RF
in2B
RF
out1B
/V
D1B
V
G2B
RF
in1B
V
G1B
Quiescent Current
Temperature Compensation
(1)
RF
out2B
/V
D2B
RF
in2A
RF
out1A
/V
D1A
GND
GND
V
G1A
RF
in1A
V
G2A
V
G2B
RF
in1B
V
G1B
GND
GND
RF
out1B
/V
D1B
RF
in2B
1
2
3
4
5
6
7
8
9
10
11
12
13
14
(Top View)
16
RF
out2A
/
V
D2A
15
RF
out2B
/
V
D2B
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2011. All rights reserved.
MD8IC970NR1 MD8IC970GNR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +70
--0.5, +10
32, +0
--65 to +150
150
225
30
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Final Application
Thermal Resistance, Junction to Case
Case Temperature 80°C, 35 W Avg. Two--Tone
Stage 1, 28 Vdc, I
DQ1(A+B)
= 60 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
Stage 2, 25 Vdc, I
DQ2(A+B)
= 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
R
θJC
2.9
0.6
°C/W
Symbol
Value
(2,3)
Unit
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1A (Minimum)
A (Minimum)
I (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 40
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1(A+B)
= 60 mAdc)
Fixture Gate Quiescent Voltage
(V
DD1
= 28 Vdc, I
DQ1(A+B)
= 60 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
9.0
2.0
3.1
10.0
2.7
—
11.0
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Side A and Side B are tied together for this measurement.
(continued)
MD8IC970NR1 MD8IC970GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 320
μAdc)
Gate Quiescent Voltage
(V
DS
= 25 Vdc, I
DQ2(A+B)
= 550 mAdc)
Fixture Gate Quiescent Voltage
(V
DD2
= 25 Vdc, I
DQ2(A+B)
= 550 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.2 Adc)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
7.6
0.1
2.0
3.1
8.6
0.48
2.7
—
9.6
1.2
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1,2)
(In Freescale Test Fixture, 50 ohm system) V
DD1
= 28 Vdc, V
DD2
= 25 Vdc, P
out
= 35 W Avg., I
DQ1(A+B)
= 60 mA,
I
DQ2(A+B)
= 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
Power Gain
Power Added Efficiency
Intermodulation Distortion
G
ps
PAE
IMD
31.5
40.5
—
32.6
42.1
--31.3
36.5
—
--29.0
dB
%
dB
Typical Broadband Performance
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD1
= 28 Vdc, V
DD2
= 25 Vdc, P
out
= 35 W Avg.,
I
DQ1(A+B)
= 60 mA, I
DQ2(A+B)
= 550 mA
Frequency
850 MHz
900 MHz
940 MHz
G
ps
(dB)
30.6
31.9
32.6
PAE
(%)
40.1
42.4
42.1
IMD
(dBc)
--30.5
--31.0
--31.3
Typical Performances
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD1
= 28 Vdc, V
DD2
= 25 Vdc, I
DQ1(A+B)
= 60 mA,
I
DQ2(A+B)
= 550 mA, 850--940 MHz Bandwidth
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 71 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
with 8.25 kΩ Gate Feed Resistors (--30 to 85°C)
(3)
Gain Flatness in 90 MHz Bandwidth @ P
out
= 35 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Stage 1
Stage 2
Symbol
P1dB
IMD
sym
Min
—
—
Typ
79
22
Max
—
—
Unit
W
MHz
VBW
res
∆I
QT
G
F
∆G
∆P1dB
—
—
—
—
—
—
50
5.03
4.61
1.2
0.03
0.005
—
—
—
—
—
—
MHz
%
dB
dB/°C
dB/°C
1. Side A and Side B are tied together for this measurement.
2. Part internally matched both on input and output.
3. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MD8IC970NR1 MD8IC970GNR1
RF Device Data
Freescale Semiconductor
3
V
GG2A
V
DD1A
C1
R2
L1
C7
C13
L3
R4
C17
C19
R6
R7
C18
C14
C8
L4
R5
C20
CUT OUT AREA
C21
C23
C25
C22
C26
C24
C28
C27
L5
R8
C35
V
DD2A
V
GG1A
C9
C5
C3
Z1
R1
C4
C11
C15
C16
C12
C2
C6
V
GG1B
C10
C29
C31
C32
C30
C33
Z2
C34
V
DD2B
C36
R10
V
GG2B
V
DD1B
R3
L2
L6
R9
MD8IC970N
Rev. 1
Figure 3. MD8IC970NR1(GNR1) Test Circuit Component Layout
Table 6. MD8IC970NR1(GNR1) Test Circuit Component Designations and Values
Part
C1, C2, C35, C36
C3, C4, C9, C10
C5, C6
C7, C8, C27, C28, C33, C34
C11, C12
C13, C14
C15, C16, C19, C20
C17, C18
C21, C22
C23, C24, C25, C26
C29. C30, C31, C32
L1, L2, L5, L6
L3, L4
R1
R2, R3, R8, R9
R4, R5, R6, R7
R10
Z1, Z2
PCB
Description
10
μF,
50 V Chip Capacitors
1
μF,
50 V Chip Capacitors
3.3 pF Chip Capacitors
39 pF Chip Capacitors
47 pF Chip Capacitors
4.7 pF Chip Capacitors
0.1
μF,
50 V Chip Capacitors
5.6 pF Chip Capacitors
15 pF Chip Capacitors
4.7 pF Chip Capacitors
2.7 pF Chip Capacitors
5.0 nH 2 Turn Inductors
2.8 nH Chip Inductors
51
Ω,
1/8 W Chip Resistor
10
Ω,
1/8 W Chip Resistors
8.25 kΩ, 1/10 W Chip Resistors
50
Ω,
10 W SM Chip Power Resistor
900 MHz Band, 90°, 3 dB Chip Hybrid Couplers
0.030″,
ε
r
= 3.66
Part Number
GRM55DR61H106KA88L
GRM31MR71H105KA88L
ATC600F3R3BT250XT
ATC600F390JT250XT
ATC600S470JT250XT
ATC600S4R7JT250XT
GRM188R71C104K01D
ATC600S5R6JT250XT
ATC600F150JT250XT
ATC600F4R7BT250XT
ATC600F2R7BT250XT
A02TKLC
0805CS--020XJLC
SG73P2ATTD51R0F
RK73H2ATTD10R0F
RK73H1JTTD8251F
81A7031--50--5F
GSC362--HYB0900
RO4350B
Manufacturer
Murata
Murata
ATC
ATC
ATC
ATC
Murata
ATC
ATC
ATC
ATC
Coilcraft
Coilcraft
KOA Speer
KOA Speer
KOA Speer
Florida RF Labs
Soshin
Rogers
MD8IC970NR1 MD8IC970GNR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
PAE, POWER ADDED
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
0
--10
--20
--30
--40
--50
--60
IMD, INTERMODULATION DISTORTION (dBc)
PAE, POWER ADDED EFFICIENCY (%)
36
35
34
G
ps
, POWER GAIN (dB)
33
32
31
30
29
28
27
26
820
IMD
G
ps
PAE
44
42
40
38
36
--27
V
DD1
= 28 Vdc, V
DD2
= 25 Vdc, I
DQ1(A+B)
= 60 mA
--28
I
DQ2(A+B)
= 550 mA, P
out
= 35 W (Avg.)
--29
200 kHz Tone Spacing
--30
--31
--32
840
860
880
900
920
940
960
980
f, FREQUENCY (MHz)
Figure 4. Two-
-Tone Broadband Performance
@ P
out
= 35 Watts Avg.
--10
--20
--30
--40
IM7--U
--50
--60
IM7--L
V
DD1
= 28 Vdc, V
DD2
= 25 Vdc, P
out
= 71 W (PEP)
I
DQ1(A+B)
= 60 mA, I
DQ2(A+B)
= 550 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 900 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IMD, INTERMODULATION DISTORTION (dBc)
1
10
TWO--TONE SPACING (MHz)
100
Figure 5. Intermodulation Distortion Products
versus Two-
-Tone Spacing
35
34
G
ps
, POWER GAIN (dB)
33
32
31
30
29
60
50
40
30
20
10
0
20
30
40
50
60
P
out
, OUTPUT POWER (WATTS)
V
DD1
= 28 Vdc, V
DD2
= 25 Vdc, I
DQ1(A+B)
= 60 mA
I
DQ2(A+B)
= 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
G
ps
PAE
IMD
10
Figure 6. Power Gain, Power Added Efficiency and
Intermodulation Distortion Products versus
Average Output Power
MD8IC970NR1 MD8IC970GNR1
RF Device Data
Freescale Semiconductor
5
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