IDT02S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
• High surge current capability
• Qualified according to JEDEC
1)
for target applications
• Breakdown voltage tested at 5mA
2)
• Optimized for high temperature operation
Product Summary
V
DC
Q
c
I
F
600
3.2
2
V
nC
A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
Type
IDT02S60C
Maximum ratings
Parameter
Continuous forward current
Symbol Conditions
I
F
T
C
<120 °C
T
C
<70 °C
RMS forward current
I
F,RMS
f
=50 Hz
T
C
=25 °C,
t
p
=10 ms
T
C
=150°C,
t
p
=10 ms
T
j
=150 °C,
T
C
=100 °C,
D
=0.1
T
C
=25 °C,
t
p
=10 µs
T
C
=25 °C,
t
p
=10 ms
T
C
=150°C,
t
p
=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
Rev. 2.0
V
RRM
dv/ dt
P
tot
T
j
,
T
stg
M3 and M3.5 screws
page 1
T
j
=25 °C
V
R
= 0….480V
T
C
=25 °C
Value
2
3
2.8
11.5
9.7
7.3
100
0.61
0.44
600
50
18
-55 ... 175
60
V
V/ns
W
°C
Mcm
2007-04-25
A
2
s
Unit
A
Package
PG-TO220-2-2
Marking
D02S60C
Pin 1
C
Pin 2
A
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i
²t value
I
F,RM
I
F,max
∫i
2
dt
IDT02S60C
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics
Static characteristics
DC blocking voltage
Diode forward voltage
V
DC
V
F
I
R
=0.05mA,
T
j
=25°C
I
F
=2 A,
T
j
=25 °C
I
F
=2 A,
T
j
=150 °C
I
F
=3 A,
T
j
=25 °C
I
F
=3 A,
T
j
=150 °C
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
V
R
=600 V,
T
j
=150 °C
AC characteristics
Total capacitive charge
Switching time
3)
Q
c
t
c
C
V
R
=400 V,I
F
≤I
F,max
,
di
F
/dt =200 A/µs,
T
j
=150 °C
V
R
=1 V,
f
= MHz
V
R
=300 V,
f
=1 MHz
V
R
=600 V,
f
=1 MHz
-
-
-
-
-
3.2
-
60
8
8
-
<10
-
-
-
nC
ns
pF
600
-
-
-
-
-
-
-
1.7
2.1
2.1
2.8
0.23
1
-
1.9
2.6
2.4
3.7
15
150
µA
V
R
thJC
R
thJA
leaded
1.6mm (0.063 in.) from
case for 10s
-
-
-
-
8.5
62
K/W
Values
typ.
max.
Unit
T
sold
-
-
260
°C
1)
2)
3)
J-STD20 and JESD22
All devices tested under avalanche condition, for a time periode of 5ms, at 5mA.
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design.
page 2
2007-04-25
Rev. 2.0
IDT02S60C
1 Power dissipation
P
tot
=f(T
C
)
parameter: R
thJC(max)
20
2 Diode forward current
I
F
=f(T
C
);
T
j
≤175
°C
parameter: D=t
P
/T
14
12
16
10
12
0.1
P
tot
[W]
8
I
F
[A]
0.3
8
6
0.5
4
4
2
0.7
1
0
25
75
125
175
0
25
75
125
175
T
C
[°C]
T
C
[°C]
3 Typ. forward characteristic
I
F
=f(V
F
);
t
p
=400 µs
parameter:
T
j
3
25ºC
-55ºC
100ºC
150ºC
4 Typ. forward characteristic in surge current
mode
I
F
=f(V
F
);
t
p
=400 µs; parameter: T
j
15
12
175ºC
IF
2
175ºC
IF
9
I
F
[A]
I
F
[A]
-55ºC
150ºC
6
1
100ºC
25ºC
3
0
0
1
2
3
4
0
0
2
4
6
8
V
F
[V]
V
F
[V]
Rev. 2.0
page 3
2007-04-25
IDT02S60C
5 Typ. capacitance charge vs. current slope
Q
C
=f(di
F
/dt )
4)
;
T
j
=150 °C;
I
F
≤I
F,max
6 Typ. reverse current vs. reverse voltage
I
R
=f(V
R
)
parameter:
T
j
4
10
-5
10
-6
3
175 °C
10
-7
150 °C
100 °C
Q
C
[nC]
2
I
R
[µA]
10
-8
25 °C
-55 °C
1
10
-9
0
100
400
700
1000
10
-10
100
200
300
400
500
600
di
F
/d t [A/µs]
V
R
[V]
7 Transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
0.5
8 Typ. capacitance vs. reverse voltage
C
=f(V
R
);
T
C
=25 °C,
f
=1 MHz
60
0.2
45
10
0
0.1
0.05
Z
thJC
[K/W]
C
[pF]
-4
-3
-2
-1
0.02
30
10
-1
0
15
10
-2
10
-5
0
10
10
10
10
10
0
10
1
10
2
10
3
t
P
[s]
V
R
[V]
Rev. 2.0
page 4
2007-04-25
IDT02S60C
9 Typ. C stored energy
E
C
=f(V
R
)
1.8
1.5
1.3
E
c
[µC]
1.0
0.8
0.5
0.3
0.0
0
100
200
300
400
500
600
V
R
[V]
Rev. 2.0
page 5
2007-04-25
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