IDD03E60
Fast Switching EmCon Diode
Feature
•
600 V EmCon technology
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
175°C operating temperature
•
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
600
3
1.5
175
V
A
V
°C
Type
IDD03E60
Package
PG-TO252-3-1
Ordering Code
-
Marking
D03E60
Pin 1 PIN 2,4
NC
C
PIN 3
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25°C
T
C
=90°C
Symbol
V
RRM
I
F
Value
600
7.3
4.9
Unit
V
A
Surge non repetitive forward current
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
I
FRM
P
tot
16
11
W
23
13.1
Maximum repetitive forward current
T
C
=25°C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
reflow soldering, MSL3
T
j ,
T
stg
T
S
-55...+175
260
°C
°C
Rev.2.2
Page 1
2007-04-24
IDD03E60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
-
-
-
Values
typ.
-
-
-
max.
6.5
75
50
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=600V,
T
j
=25°C
V
R
=600V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.5
1.5
50
250
V
2
-
Forward voltage drop
I
F
=3A,
T
j
=25°C
I
F
=3A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-04-24
IDD03E60
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=25°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=125°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
62
98
103
3.8
4.6
4.7
118
195
215
4.1
5.1
5.2
-
-
-
A
-
-
-
nC
-
-
-
-
-
-
Peak reverse current
V
R
=400V,
I
F
= 3 A, di
F
/dt=350A/µs,
T
j
=25°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=125°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=25°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=125°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=25°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=125°C
V
R
=400V,
I
F
=3A, di
F
/dt=350A/µs,
T
j
=150°C
Rev.2.2
Page 3
2007-04-24
IDD03E60
1 Power dissipation
P
tot
=
f
(T
C
)
parameter:
T
j
≤
175°C
24
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
175°C
8
W
20
18
A
6
P
tot
16
5
14
12
10
3
8
6
4
1
2
0
25
50
75
100
125
2
4
I
F
175
°C
T
C
0
25
50
75
100
125
°C
T
C
175
3 Typ. diode forward current
I
F
=
f
(V
F
)
9
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2
A
7
6
V
6A
V
F
I
F
-55°C
25°C
100°C
150°C
1.8
1.7
1.6
1.5
3A
5
4
1.4
3
2
1
0
0
1.3
1.2
1.1
1
-60
1,5A
0.5
1
1.5
V
V
F
2.5
-20
20
60
100
160
°C
T
j
Rev.2.2
Page 4
2007-04-24
IDD03E60
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
220
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125 °C
300
ns
180
160
nC
260
6A
t
rr
140
120
6A
3A
1.5A
240
Q
rr
220
200
3A
100
180
80
60
40
20
0
200
300
400
500
600
700
800
160
1.5A
140
120
100
200
800
A/µs
1000
A/µs
1000
di
F
/dt
300
400
500
600
700
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
8
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
9
A
7
6.5
6A
3A
1.5A
7
6
6A
3A
1.5A
I
rr
S
5
4
3
2
1
0
200
300
400
500
600
700
800
6
5.5
5
4.5
4
3.5
3
2.5
200
A/µs
1000
di
F
/dt
300
400
500
600
700
800
A/µs
1000
di
F
/dt
Rev.2.2
Page 5
2007-04-24
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
