IDB30E120
Fast Switching EmCon Diode
Feature
•
1200 V EmCon technology
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
1200
30
1.65
150
PG-TO263-3-2
V
A
V
°C
Type
IDB30E120
Package
PG-TO263-3-2
Ordering Code
-
Marking
D30E120
Pin 1
NC
PIN 2
C
PIN 3
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25°C
T
C
=90°C
Symbol
V
RRM
I
F
Value
1200
50
30
Unit
V
A
Surge non repetitive forward current
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
I
FRM
P
tot
102
76.5
W
138
66
Maximum repetitive forward current
T
C
=25°C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
T
j ,
T
stg
T
S
-55...+150
245
°C
°C
Rev.2.2
Page 1
2007-09-01
IDB30E120
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
35
max.
0.9
62
62
-
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=1200V,
T
j
=25°C
V
R
=1200V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.65
1.7
100
2500
V
2.15
-
Forward voltage drop
I
F
=30A,
T
j
=25°C
I
F
=30A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-09-01
IDB30E120
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=25°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=125°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
243
355
380
-
-
-
A
23.7
28.3
29.5
-
-
-
nC
2630
4700
5200
-
-
-
Peak reverse current
V
R
=800V,
I
F
= 30 A, di
F
/dt=850A/µs,
T
j
=25°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=125°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=25°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=125°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=25°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=125°C
V
R
=800V,
I
F
=30A, di
F
/dt=850A/µs,
T
j
=150°C
6
7.4
7.5
-
-
-
Rev.2.2
Page 3
2007-09-01
IDB30E120
1 Power dissipation
P
tot
=
f
(T
C
)
parameter: Tj
≤
150°C
140
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
150°C
55
W
120
A
45
110
100
40
P
tot
80
70
60
50
40
30
I
F
50
75
100
150
90
35
30
25
20
15
10
20
10
0
25
5
°C
T
C
0
25
50
75
100
°C
T
C
150
3 Typ. diode forward current
I
F
=
f
(V
F
)
90
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2.4
60A
A
V
70
60
-55°C
25°C
100°C
150°C
50
1.8
40
30
20
1.4
10
0
0
1.2
-60
1.6
15A
30A
0.5
1
1.5
2
V
V
F
3
V
F
2
I
F
-20
20
60
100
160
°C
T
j
Rev.2.2
Page 4
2007-09-01
IDB30E120
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
1100
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125 °C
6500
ns
nC
60A
900
800
5500
60A
30A
15A
Q
rr
t
rr
5000
30A
700
4500
600
4000
500
400
300
200
200
3500
15A
3000
300
400
500
600
700
800
A/µs
1000
di
F
/dt
2500
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
35
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 800V,
T
j
= 125°C
18
A
60A
30A
15A
14
25
I
rr
12
20
10
15
8
60A
30A
15A
10
S
6
5
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
4
200
300
400
500
600
700
800
A/µs
1000
di
F
/dt
Rev.2.2
Page 5
2007-09-01
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