IDB06E60
Fast Switching EmCon Diode
Feature
•
600 V EmCon technology
•
Fast recovery
•
Soft switching
•
Low reverse recovery charge
•
Low forward voltage
•
175°C operating temperature
•
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
600
6
1.5
175
PG-TO263-3-2
V
A
V
°C
Type
IDB06E60
Package
PG-TO263-3-2
Ordering Code
-
Marking
D06E60
Pin 1
NC
PIN 2
C
PIN 3
A
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
T
C
=25°C
T
C
=90°C
Symbol
V
RRM
I
F
Value
600
14.7
10
Unit
V
A
Surge non repetitive forward current
T
C
=25°C,
t
p
=10 ms, sine halfwave
I
FSM
I
FRM
P
tot
29
22
W
46.9
26.6
Maximum repetitive forward current
T
C
=25°C,
t
p
limited by
T
jmax
,
D=0.5
Power dissipation
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
reflow soldering, MSL1
T
j ,
T
stg
T
S
-55...+175
245
°C
°C
Rev.2.2
Page 1
2007-09-01
IDB06E60
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
35
max.
3.2
62
62
-
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Reverse leakage current
V
R
=600V,
T
j
=25°C
V
R
=600V,
T
j
=150°C
Symbol
min.
I
R
-
-
V
F
-
-
Values
typ.
max.
Unit
µA
-
-
1.5
1.5
50
500
V
2
-
Forward voltage drop
I
F
=6A,
T
j
=25°C
I
F
=6A,
T
j
=150°C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.2
Page 2
2007-09-01
IDB06E60
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Reverse recovery time
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=25°C
V
R
=400V,
I
F
=6A, di/dt=550A/µs ,
T
j
=125°C
V
R
=400V,
I
F
=6A, di/dt=550A/µs ,
T
j
=150°C
Symbol
min.
t
rr
-
-
-
I
rrm
-
-
-
Q
rr
-
-
-
S
-
-
-
Values
typ.
max.
Unit
ns
70
100
105
-
-
-
A
6.5
7.4
7.9
-
-
-
nC
240
360
400
-
-
-
Peak reverse current
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=25°C
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=125°C
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=150°C
Reverse recovery charge
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=25°C
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=125°C
V
R
=400V,
I
F
=6A, di/dt=550A/µs,
T
j
=150°C
Reverse recovery softness factor
V
R
=400V,
I
F
=6A, di
F
/dt=550A/µs,
T
j
=25°C
V
R
=400V,
I
F
=6A, di
F
/dt=550A/µs,
T
j
=125°C
V
R
=400V,
I
F
=6A, di
F
/dt=550A/µs,
T
j
=150°C
4
4.8
4.9
-
-
-
Rev.2.2
Page 3
2007-09-01
IDB06E60
1 Power dissipation
P
tot
=
f
(T
C
)
parameter: Tj
≤
175 °C
50
2 Diode forward current
I
F
= f(T
C
)
parameter:
T
j
≤
175°C
16
W
40
A
12
35
P
tot
I
F
50
75
100
125
175
30
25
20
15
10
8
6
4
10
5
0
25
2
°C
T
C
0
25
50
75
100
125
°C
T
C
175
3 Typ. diode forward current
I
F
=
f
(V
F
)
18
4 Typ. diode forward voltage
V
F
=
f
(T
j
)
2
A
V
1.8
1.7
12A
14
12
V
F
I
F
-55°C
25°C
100°C
150°C
1.6
1.5
6A
10
8
1.4
6
1.3
4
2
0
0
3A
1.2
1.1
1
-60
0.5
1
1.5
V
V
F
2.5
-20
20
60
100
160
°C
T
j
Rev.2.2
Page 4
2007-09-01
IDB06E60
5 Typ. reverse recovery time
t
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
300
6 Typ. reverse recovery charge
Q
rr
=f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125 °C
550
nC
ns
12A
6A
3A
500
475
12A
Q
rr
200
450
425
t
rr
150
400
375
6A
100
350
325
50
300
275
3A
0
200
300
400
500
600
A/µs
800
250
200
300
400
500
600
A/µs
800
di
F
/dt
di
F
/dt
7 Typ. reverse recovery current
I
rr
=
f
(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
11
8 Typ. reverse recovery softness factor
S = f(di
F
/dt)
parameter:
V
R
= 400V,
T
j
= 125°C
11
A
9
9
12A
6A
3A
8
7
6
12A
6A
3A
I
rr
7
5
6
4
3
2
4
1
3
200
300
400
500
600
5
S
800
8
A/µs
0
200
300
400
500
600
700
800
di
F
/dt
A/µs
1000
di
F
/dt
Rev.2.2
Page 5
2007-09-01
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