SEMiX404GB12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 150 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
618
475
400
1200
-20 ... 20
10
-40 ... 175
440
329
400
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
1200
1980
-40 ... 175
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 4s
Trench IGBT Modules
SEMiX404GB12E4s
®
T
j
= 175 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
I
C
= 400 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
24.6
1.62
1.38
2260
1.88
T
j
= 150 °C
T
j
= 150 °C
296
67
27
634
137
59.7
0.072
1.8
2.2
0.8
0.7
2.5
3.8
5.8
0.12
2.05
2.4
0.9
0.8
2.9
4.0
6.5
0.36
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended R
Goff
> 25
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
Ω
R
Goff,main
= 1,0
Ω
R
G,X
= 2,2
Ω
R
E,X
= 0,5
Ω
V
GE
=V
CE
, I
C
= 15.2 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 400 A
T
j
= 150 °C
R
G on
= 1.7
Ω
T
j
= 150 °C
R
G off
= 1.7
Ω
di/dt
on
= 5800 A/µs T
j
= 150 °C
di/dt
off
= 3700 A/µs
T
j
= 150 °C
per IGBT
GB
© by SEMIKRON
Rev. 0 – 05.05.2010
1
SEMiX404GB12E4s
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
T
j
= 150 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
22
0.7
1
0.03
5
5
400
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
w
Temperatur Sensor
R
100
B
100/125
Ω
K
g
I
F
= 400 A
T
j
= 150 °C
di/dt
off
= 4900 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
1.1
0.7
2.0
2.6
min.
typ.
2.2
2.1
1.3
0.9
2.3
3.1
315
63
26.4
max.
2.52
2.5
1.5
1.1
2.5
3.4
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 400 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
4s
Trench IGBT Modules
SEMiX404GB12E4s
0.14
K/W
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
R
th(c-s)
M
s
M
t
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• For short circuit: Soft R
Goff
recommended R
Goff
> 25
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
Ω
R
Goff,main
= 1,0
Ω
R
G,X
= 2,2
Ω
R
E,X
= 0,5
Ω
GB
2
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX404GB12E4s
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 05.05.2010
3
SEMiX404GB12E4s
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 05.05.2010
© by SEMIKRON
SEMiX404GB12E4s
SEMiX 4s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 05.05.2010
5
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