SEMiX341D16s
Absolute Maximum Ratings
Symbol
I
FAV
I
FSM
i
2
t
Conditions
T
c
= 85 °C
T
c
= 100 °C
T
j
= 25 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 130 °C
Values
340
290
2500
2000
31250
20000
1700
1600
-40 ... 130
-40 ... 125
Unit
A
A
A
A
A
2
s
A
2
s
V
V
°C
°C
V
V
Recitifier Diode
sin. 180°
10 ms
10 ms
SEMiX
®
13
V
RSM
V
RRM
T
j
Module
Bridge Rectifier Module
(uncontrolled)
SEMiX341D16s
T
stg
V
isol
AC sinus 50Hz
1 min
1s
4000
4800
Characteristics
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Symbol
Diode
V
F
V
(TO)
r
T
I
RD
R
th(j-c)
R
th(j-c)
Module
R
th(c-s)
M
s
M
t
a
w
Conditions
T
j
= 25 °C, I
F
= 400 A
T
j
= 130 °C
T
j
= 130 °C
T
j
= 130 °C, V
RD
= V
RRM
per diode
per diode
min.
typ.
max.
1.75
0.9
2.7
4.5
Unit
V
V
mΩ
mA
K/W
K/W
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• power supply
sin. 180
0.22
K/W
K/W
K/W
per chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
350
0.04
5
5
5 * 9,81
K/W
Nm
Nm
m/s
2
g
D
© by SEMIKRON
Rev. 66 – 25.03.2010
1
SEMiX341D16s
Fig. 4L: Power dissipation per module vs. direct current
Fig. 4R: Power dissipation per module vs. case
temperature
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
2
Rev. 66 – 25.03.2010
© by SEMIKRON
SEMiX341D16s
spring configuration
SEMiX 13
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 66 – 25.03.2010
3
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