SEMiX303GB12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
20 V
V
CES
≤
1200 V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
466
359
300
900
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
338
252
300
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
1485
-40 ... 175
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
= 175 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Conditions
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 300 A
V
GE
= ±15 V
R
G on
= 1.8
R
G off
= 1.8
di/dt
on
= 5250 A/µs
di/dt
off
= 2825 A/µs
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.8
2.2
0.8
0.7
3.3
5.0
max.
2.05
2.4
0.9
0.8
3.8
5.3
6.5
0.3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 1,0
R
G,X
= 2,0
R
E,X
= 0,5
V
GE
=V
CE
, I
C
= 11.4 mA
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5
5.8
0.1
18.5
1.22
1.03
1695
2.50
255
57
30
565
98
41.2
0.095
K/W
GB
© by SEMIKRON
Rev. 1 – 05.01.2011
1
SEMiX303GB12E4s
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 5100 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 150 °C
1.1
0.7
2.7
3.5
min.
typ.
2.2
2.2
1.3
0.9
3.0
4.2
300
44.2
17.7
max.
2.52
2.5
1.5
1.1
3.4
4.6
Unit
V
V
V
V
m
m
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
3s
Trench IGBT Modules
SEMiX303GB12E4s
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognized, file no. E63532
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
0.18
20
K/W
nH
m
m
K/W
res., terminal-chip
per module
to heat sink (M5)
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.04
5
5
300
Nm
Nm
Nm
g
K
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 k)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 1,0
R
G,X
= 2,0
R
E,X
= 0,5
GB
2
Rev. 1 – 05.01.2011
© by SEMIKRON
SEMiX303GB12E4s
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 05.01.2011
3
SEMiX303GB12E4s
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 05.01.2011
© by SEMIKRON
SEMiX303GB12E4s
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 05.01.2011
5
Microchip MCU
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