SEMiX302KT16s
Absolute Maximum Ratings
Symbol
Chip
I
T(AV)
I
TSM
i
2
t
sinus 180°
10 ms
10 ms
T
c
= 85 °C
T
c
= 100 °C
T
j
= 25 °C
T
j
= 130 °C
T
j
= 25 °C
T
j
= 130 °C
300
230
9300
8000
432000
320000
1700
1600
1600
T
j
= 130 °C
T
j
= 130 °C
130
1000
-40 ... 130
-40 ... 125
AC sinus 50Hz
1 min
1s
4000
4800
A
A
A
A
A
2
s
A
2
s
V
V
V
A/µs
V/µs
°C
°C
V
V
Conditions
Values
Unit
SEMiX
®
2s
V
RSM
V
RRM
V
DRM
(di/dt)
cr
Rectifier Thyristor Module
SEMiX302KT16s
(dv/dt)
cr
T
j
Module
T
stg
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
V
isol
Characteristics
Symbol
Chip
V
T
V
T(TO)
r
T
I
DD
;I
RD
t
gd
t
gr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
th(j-c)
R
th(j-c)
R
th(j-c)
Module
R
th(c-s)
M
s
M
t
a
w
250
per chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
0.045
5
5
5 * 9,81
K/W
K/W
Nm
Nm
m/s
2
g
T
j
= 25 °C, I
T
= 900 A
T
j
= 130 °C
T
j
= 130 °C
T
j
= 130 °C, V
DD
= V
DRM
; V
RD
= V
RRM
T
j
= 25 °C, I
G
= 1 A, di
G
/dt = 1 A/µs
V
D
= 0.67 * V
DRM
T
j
= 130 °C
T
j
= 25 °C
T
j
= 25 °C, R
G
= 33
Ω
T
j
= 25 °C, d.c.
T
j
= 25 °C, d.c.
T
j
= 130 °C, d.c.
T
j
= 130 °C, d.c.
per thyristor
per module
sin. 180°
per thyristor
per module
per thyristor
per module
0.091
3
200
0.25
10
1
2
150
150
300
500
1000
1.7
0.85
1.7
75
V
V
mΩ
mA
µs
µs
µs
mA
mA
V
mA
V
mA
K/W
K/W
K/W
K/W
K/W
K/W
Typical Applications*
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
Conditions
min.
typ.
max.
Unit
KT
© by SEMIKRON
Rev. 41 – 25.03.2010
1
SEMiX302KT16s
Fig. 1L: Power dissipation per thyristor/diode vs.
on-state current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 41 – 25.03.2010
© by SEMIKRON
SEMiX302KT16s
Fig. 4L: Power dissipation of three modules vs. direct
current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 41 – 25.03.2010
3
SEMiX302KT16s
Fig. 9: Gate trigger characteristics
spring configuration
SEMiX 2s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
4
Rev. 41 – 25.03.2010
© by SEMIKRON
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