SEMiX353GB176HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 1000 V
V
GE
≤
20 V
V
CES
≤
1700 V
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1700
353
251
225
450
-20 ... 20
T
j
= 125 °C
10
-55 ... 150
T
c
= 25 °C
T
c
= 80 °C
428
289
225
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
450
1800
-40 ... 150
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
Trench IGBT Modules
SEMiX353GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
Conditions
I
C
= 225 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 9 mA
V
GE
= 0 V
V
CE
= 1700 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 1200 V
I
C
= 225 A
V
GE
= ±15 V
R
G on
= 5.6
R
G off
= 5.6
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
2
2.5
1
0.9
4.4
6.9
max.
2.45
2.9
1.2
1.1
5.6
8.0
6.4
3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
5.2
5.8
0.1
19.9
0.83
0.66
2100
2.83
250
75
155
930
180
85
0.086
K/W
GB
© by SEMIKRON
Rev. 2 – 23.03.2011
1
SEMiX353GB176HDs
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
T
j
= 25 °C
I
F
= 225 A
T
j
= 125 °C
di/dt
off
= 4000 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 1200 V
per diode
T
j
= 125 °C
0.9
0.7
2.0
2.7
min.
typ.
1.6
1.5
1.1
0.9
2.0
2.7
280
83
45
max.
1.75
1.7
1.3
1.1
2.0
2.7
Unit
V
V
V
V
m
m
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 225 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
3s
Trench IGBT Modules
SEMiX353GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• UL recognised file no. E63532
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
0.13
20
K/W
nH
m
m
K/W
res., terminal-chip
per module
to heat sink (M5)
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.04
5
5
300
Nm
Nm
Nm
g
K
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 k)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
GB
2
Rev. 2 – 23.03.2011
© by SEMIKRON
SEMiX353GB176HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 23.03.2011
3
SEMiX353GB176HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 23.03.2011
© by SEMIKRON
SEMiX353GB176HDs
SEMiX 3s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 23.03.2011
5
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