SEMiX303GD12Vc
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 600 V
V
GE
≤
15 V
V
CES
≤
1200 V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
448
342
300
900
-20 ... 20
T
j
= 125 °C
10
-40 ... 175
T
c
= 25 °C
T
c
= 80 °C
327
244
300
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
1485
-40 ... 175
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 33c
®
V
GES
t
psc
T
j
I
F
I
Fnom
Inverse diode
SEMiX303GD12Vc
Features
• Homogeneous Si
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
T
j
= 175 °C
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 1,0
R
G,X
= 2,2
R
E,X
= 1,0
Conditions
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 300 A
V
GE
= ±15 V
R
G on
= 2.1
R
G off
= 2.1
di/dt
on
= 4200 A/µs
di/dt
off
= 2600 A/µs
du/dt
off
= 6600 V/
µs
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
min.
typ.
1.75
2.2
0.94
0.88
2.7
4.4
max.
2.2
2.5
1.04
0.98
3.9
5.1
6.5
0.3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
V
GE
=V
CE
, I
C
= 12 mA
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5.5
6
0.1
18.0
1.77
1.77
3300
2.50
470
72
26.5
665
109
36.3
0.1
K/W
GD
© by SEMIKRON
Rev. 2 – 16.02.2011
1
SEMiX303GD12Vc
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 4600 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 150 °C
1.1
0.7
2.7
3.5
min.
typ.
2.2
2.2
1.3
0.9
3.0
4.2
283
52
21.4
max.
2.52
2.5
1.5
1.1
3.4
4.6
Unit
V
V
V
V
m
m
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
33c
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
0.19
20
K/W
nH
m
m
K/W
SEMiX303GD12Vc
Features
• Homogeneous Si
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
res., terminal-chip
per module
to heat sink (M5)
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.014
5
5
900
R
th(c-s)
M
s
M
t
w
Nm
Nm
Nm
g
K
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 k)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 1,0
R
Goff,main
= 1,0
R
G,X
= 2,2
R
E,X
= 1,0
GD
2
Rev. 2 – 16.02.2011
© by SEMIKRON
SEMiX303GD12Vc
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 2 – 16.02.2011
3
SEMiX303GD12Vc
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 2 – 16.02.2011
© by SEMIKRON
SEMiX303GD12Vc
SEMiX 33c
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 2 – 16.02.2011
5
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