SEMiX252GB126HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
V
CES
≤
1200 V
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
242
170
150
300
-20 ... 20
T
j
= 125 °C
10
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
228
158
150
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
300
1000
-40 ... 150
T
terminal
= 80 °C
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 2s
Trench IGBT Modules
SEMiX252GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Inverse diode
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
Conditions
I
C
= 150 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 6 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 150 A
V
GE
= ±15 V
R
G on
= 3
R
G off
= 3
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
j
= 25 °C
T
j
= 125 °C
min.
typ.
1.7
2.0
1
0.9
4.7
7.3
max.
2.1
2.45
1.2
1.1
6.0
9.0
6.5
0.3
Unit
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
5
5.8
0.1
10.7
0.56
0.48
1200
5.00
300
45
20
570
110
21
0.15
K/W
GB
© by SEMIKRON
Rev. 1 – 23.03.2011
1
SEMiX252GB126HDs
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
T
j
= 25 °C
I
F
= 150 A
T
j
= 125 °C
di/dt
off
= 4600 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
T
j
= 125 °C
0.9
0.7
3.3
4.7
min.
typ.
1.6
1.6
1
0.8
4.0
5.3
260
43
18
max.
1.80
1.8
1.1
0.9
4.7
6.0
Unit
V
V
V
V
m
m
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 150 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
2s
Trench IGBT Modules
SEMiX252GB126HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
0.24
18
K/W
nH
m
m
K/W
res., terminal-chip
per module
to heat sink (M5)
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.045
5
5
250
Nm
Nm
Nm
g
K
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 k)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
GB
2
Rev. 1 – 23.03.2011
© by SEMIKRON
SEMiX252GB126HDs
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 23.03.2011
3
SEMiX252GB126HDs
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 23.03.2011
© by SEMIKRON
SEMiX252GB126HDs
SEMiX 2s
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 23.03.2011
5
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