Sirenza Microdevices SGA-1263 is a Silicon Germanium HBT
Heterostructure Bipolar Transistor (SiGe HBT) amplifier that
offers excellent isolation and flat gain response for applica-
tions to 4 GHz.
This RFIC is a 2-stage design that provides high isolation of
up to 40dB at 2 GHz and is fabricated using the latest SiGe
HBT 50 GHz F
T
process, featuring 1 micron emitters with
Vceo > 7V.
These unconditionally stable amplifiers have less than 1dB
gain drift over 125ºC operating range (-40C to +85C) and
are ideal for use as buffer amplifiers in oscillator applica-
tions covering cellular, ISM and narrowband PCS bands.
Isolation vs. Frequency
0
-2 0
DC-4000 MHz Silicon Germanium
HBT Cascadeable Gain Block
Product Features
DC-4000 MHz Operation
Single Supply Voltage
Excellent Isolation, >50 dB at 900 MHz
50 Ohms In/Out, Broadband Match for Operation
from DC-4 GHz
Unconditionally Stable
dB
-4 0
-6 0
-8 0
100
500
900
1900
2400
3500
6000
Applications
Buffer Amplifier for Oscillator Applications
Broadband Gain Blocks
IF Amp
Units
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 4000 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 4000 MHz
f = DC - 2400 MHz
f = 2400 - 4000 MHz
f = DC - 2400 MHz
f = 2400 - 4000 MHz
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2400 MHz
f = 1000 MHz
dBm
dBm
dB
dB
dB
dB
dB
dB
-
-
dBm
dBm
dB
dB
pS
V
mA
2.5
6
14.3
Min.
Ty p.
-7.8
-7.4
15.9
15.2
12.3
56.3
40.6
30.8
1.8:1
1.3:1
1.8:1
1.9:1
2.6
2.8
2.7
2.9
82
2.8
8
3.1
10
Max.
Frequency MHz
Sy mbol
P
1dB
S
21
Parameters: Test Conditions:
Z
0
= 50 Ohms, Id = 8 mA, T = 25ºC
Output Pow er at 1dB Compression
Small Signal Gain
S
12
S
11
S
22
IP
3
NF
T
D
V
D
I
D
Reverse Isolation
Input VSWR
Output VSWR
Third Order Intercept Point
Pow er out per Tone = -20 dBm
Noise Figure
Group Delay
Device Operating Voltage
Device Operating Current
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
EDS-100935 Rev B
Preliminary
Preliminary
SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier
Parameter
Bandwidth
Frequency Range
Device Bias
Operating Voltage
Operating Current
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
Specification
Min
DC
2.8
8
16.0
2.7
4.0
-6.9
8.5
61.6
15.7
2.7
2.6
-7.8
8.9
48.4
14.7
3.0
2.8
-7.4
8.8
35.6
14.2
2.8
0.2
-7.0
8.4
33.6
Ty p.
Max.
4000
Unit
M Hz
V
mA
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
dBm
dBm
dB
dB
T= 25C
T= 25C
Test
Condition
T= 25C
T= 25C
T= 25C
T= 25C
Absolute Maximum Ratings
Parameter
Max.
D evi ce C urrent
(I
D
)
Max.
D evi ce
Voltage (V
D
)
Max.
RF Input Power
Max.
Juncti on Temp
. (T
J
)
Operati ng Temp
. Range (T
L
)
Absolute Limit
20
mA
5V
-12 dBm
+1
50
°C
-40°C to +85°C
+150°C
Max.
Storage Temp
.
Operati on of thi s devi ce beyond any one of these li mi ts may
cause permanent damage. For reli able conti nous operati on,
the devi ce voltage and current must not exceed the maxi mum
operati ng values speci fi ed i n the table on page one.
Bi as condi ti ons should also sati sfy the followi ng expressi on:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100935 Rev A
Preliminary
Preliminary
SGA-1263 DC-4000 MHz 2.8V SiGe Amplifier
P in #
1
Function
D escription
GND
C onnecti on to ground. Use vi a holes for
best performance to reduce lead
i nductance as close to ground leads as
possi ble.
GND
S ames as P i n 1
RF IN
RF i nput pi n. Thi s pi n requi res the use of
an external D C blocki ng capaci tor
chosen for the frequency of operati on.
V cc
S upply C onnecti on. Thi s pi n should be
bypassed wi th a sui table capaci tor(s).
GND
S ames as P i n 1
RF OUT RF output and bi as pi n. D C voltage i s
present on thi s pi n, therefore a D C
blocki ng capaci tor i s necessary for
proper operati on.
D ev ice S chematic
2
3
4
5
6
Application Schematic for +5V Operation at 900 MHz
Note: A bias resistor is needed for
stability over temperature
1uF
68pF
270 ohms
V
CC
=+5V
50 ohm
microstrip
50 ohm
microstrip
3
100pF
4
6
1,2,5
100pF
Application Schematic for +5V Operation at 1900 MHz
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