Preliminary Datasheet
RJH60F0DPQ-A0
Silicon N Channel IGBT
High Speed Power Switching
Features
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.4 V typ. (at I
C
= 25 A, V
GE
= 15 V, Ta = 25°C)
•
Built in fast recovery diode in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 90 ns typ. (at I
C
= 30 A, V
CC
= 400 V, V
GE
= 15 V, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS0324EJ0100
Rev.1.00
Apr 06, 2011
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤
5
μs,
duty cycle
≤
1%
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
Tj
Tstg
Ratings
600
±30
50
25
100
100
201.6
0.62
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
Page 1 of 7
RJH60F0DPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
—
—
4
—
—
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
—
Typ
—
—
—
1.4
1.7
1550
82
26
46
92
70
90
1.2
1.5
90
Max
100
±1
8
1.82
—
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
—
—
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 25 A, V
GE
= 15V
Note3
I
C
= 50 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Ω
Note3
Inductive load
I
F
= 20 A
I
F
= 40 A
Note3
Note3
C-E diode forward voltage
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/μs
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
Page 2 of 7
RJH60F0DPQ-A0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
100
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
80
13 V
15 V
60
9.5 V
40
9V
20
V
GE
= 8.5 V
0
0
1
2
3
4
5
10.5 V
11 V
10 V
100
PW
10
μ
s
10
1
0.1
Ta = 25°C
1 shot
1
10
100
1000
0.01
0.1
Collector Current I
C
(A)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
100
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
80
μ
00
=1
s
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
5
Ta = 25
°
C
Pulse Test
4
I
C
= 15 A
25 A
50 A
Collector Current I
C
(A)
60
Tc = 75°C
25°C
20
–25°C
0
0
2
4
6
8
10
12
3
40
2
1
6
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
−25
25 A
15 A
I
C
= 50 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
I
C
= 10 mA
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
8
6
1 mA
4
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
Page 3 of 7
RJH60F0DPQ-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
Forward Current vs. Forward Voltage (Typical)
100
Diode Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
250
300
Cres
40
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
0
1
2
3
4
20
0
1
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
I
C
= 25 A
Ta = 25
°
C
V
CE
= 600 V
300 V
600
V
CE
12
400
8
200
V
CE
= 600 V
300 V
0
0
20
40
60
4
0
80
Gate Charge Qg (nc)
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
Gate to Emitter Voltage V
GE
(V)
800
V
GE
16
Page 4 of 7
RJH60F0DPQ-A0
Switching Characteristics (Typical) (1)
1000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
tr includes the diode recovery
tf
100
td(off)
tr
td(on)
Preliminary
Switching Characteristics (Typical) (2)
100000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
10000
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
Eon includes the diode recovery
1000
Eoff
100
Eon
10
10
1
10
100
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
200
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
1600
160
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tr includes the diode recovery
1200
Eoff
800
Eon
400
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon includes the diode recovery
0
0
25
50
75
100
125
150
120
tr
tf
td(off)
40
td(on)
80
0
0
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0324EJ0100 Rev.1.00
Apr 06, 2011
Page 5 of 7
MEMS传感器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
