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CY7C281A-30DMB: 产品描述OTP ROM, 1KX8, 30ns, CMOS, CDIP24, 0.300 INCH, SLIM, CERDIP-24; 产品类别存储存储; 文件大小239KB，共9页; 制造商Cypress(赛普拉斯)

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CY7C281A-30DMB概述

OTP ROM, 1KX8, 30ns, CMOS, CDIP24, 0.300 INCH, SLIM, CERDIP-24

CY7C281A-30DMB规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Cypress(赛普拉斯)
零件包装代码	DIP
包装说明	DIP, DIP24,.3
针数	24
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	30 ns
JESD-30 代码	R-GDIP-T24
JESD-609代码	e0
长度	31.877 mm
内存密度	8192 bit
内存集成电路类型	OTP ROM
内存宽度	8
功能数量	1
端子数量	24
字数	1024 words
字数代码	1000
工作模式	ASYNCHRONOUS
最高工作温度	125 °C
最低工作温度	-55 °C
组织	1KX8
输出特性	3-STATE
封装主体材料	CERAMIC, GLASS-SEALED
封装代码	DIP
封装等效代码	DIP24,.3
封装形状	RECTANGULAR
封装形式	IN-LINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	5 V
认证状态	Not Qualified
筛选级别	38535Q/M;38534H;883B
座面最大高度	5.08 mm
最大待机电流	0.12 A
最大压摆率	0.12 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	NO
技术	CMOS
温度等级	MILITARY
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子节距	2.54 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	7.62 mm

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1CY 7C28 2A

CY7C281A

CY7C282A

1K x 8 PROM

Features

• CMOS for optimum speed/power

• High speed

— 25 ns (commercial)

— 30 ns (military)

• Low power

— 495 mW (commercial)

•

— 660 mW (military)

EPROM technology 100% programmable

Slim 300-mil or standard 600-mil DIP or 28-pin LCC

±10%

, commercial and military

TTL-compatible I/O

Direct replacement for bipolar PROMs

Capable of withstanding >2001V static discharge

tical, but are packaged in 300-mil and 600-mil-wide packages

respectively. The CY7C281A is also available in a 28-pin lead-

less chip carrier. The memory cells utilize proven EPROM

floating-gate technology and byte-wide intelligent program-

ming algorithms.

The CY7C281A and CY7C282A are plug-in replacements for

bipolar devices and offer the advantages of lower power, su-

perior performance, and programming yield. The EPROM cell

requires only 12.5V for the super voltage, and low current re-

quirements allow for gang programming. The EPROM cells

allow each memory location to be tested 100% because each

location is written into, erased, and repeatedly exercised prior

to encapsulation. Each PROM is also tested for AC perfor-

mance to guarantee that after customer programming, the

product will meet DC and AC specification limits.

Reading is accomplished by placing an active LOW signal on

and CS

, and active HIGH signals on CS

and CS

. The

contents of the memory location addressed by the address

lines (A

−

) will become available on the output lines (O

−

Functional Description

The CY7C281A and CY7C282A are high-performance

1024-word by 8-bit CMOS PROMs. They are functionally iden-

LogicBlockDiagram

COLUMN

DECODER

ROW

DECODER

PROGRAMMABLE

ARRAY

MULTIPLEXER

Pin Configurations

DIP

Top View

GND

6 7C281A 19

7 7C282A 18

VCC

CS1

CS2

CS3

CS4

C281A-2

LCC/PLCC

Top View

4 3 2 1 28 27 26

7C281A

12 1314151617 18

CS1

CS2

CS3

CS4

C281A-1

CS1

CS2

CS3

CS4

C281A-3

Selection Guide

7C281A-25

7C282A-25

100

7C281A-30

7C282A-30

100

120

7C281A-45

7C282A-45

120

Maximum Access Time (ns)

Maximum Operating

Current (mA)

Commercial

Military

Cypress Semiconductor Corporation

•

3901 North First Street

•

San Jose •

CA 95134 •

408-943-2600

December 1992 – Revised December 1994

CY7C281A-30DMB相似产品对比

	CY7C281A-30DMB	CY7C281A-25DC	CY7C281A-45PC	CY7C282A-30PC	CY7C282A-25PC	CY7C282A-45DMB	CY7C281A-30DC
描述	OTP ROM, 1KX8, 30ns, CMOS, CDIP24, 0.300 INCH, SLIM, CERDIP-24	OTP ROM, 1KX8, 25ns, CMOS, CDIP24, 0.300 INCH, SLIM, CERDIP-24	OTP ROM, 1KX8, 45ns, CMOS, PDIP24, 0.300 INCH, SLIM, PLASTIC, DIP-24	OTP ROM, 1KX8, 30ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24	OTP ROM, 1KX8, 25ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24	OTP ROM, 1KX8, 45ns, CMOS, CDIP24, 0.600 INCH, CERDIP-24	OTP ROM, 1KX8, 30ns, CMOS, CDIP24, 0.300 INCH, SLIM, CERDIP-24
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Cypress(赛普拉斯)	-	-	Cypress(赛普拉斯)	Cypress(赛普拉斯)	Cypress(赛普拉斯)	Cypress(赛普拉斯)
零件包装代码	DIP	DIP	DIP	DIP	DIP	DIP	DIP
包装说明	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.3	DIP, DIP24,.6	DIP, DIP24,.6	DIP, DIP24,.6	DIP, DIP24,.3
针数	24	24	24	24	24	24	24
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	30 ns	25 ns	45 ns	30 ns	25 ns	45 ns	30 ns
JESD-30 代码	R-GDIP-T24	R-GDIP-T24	R-PDIP-T24	R-PDIP-T24	R-PDIP-T24	R-GDIP-T24	R-GDIP-T24
JESD-609代码	e0	e0	e0	e0	e0	e0	e0
长度	31.877 mm	31.877 mm	30.099 mm	31.623 mm	31.623 mm	31.877 mm	31.877 mm
内存密度	8192 bit	8192 bit	8192 bit	8192 bit	8192 bit	8192 bit	8192 bit
内存集成电路类型	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM	OTP ROM
内存宽度	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1
端子数量	24	24	24	24	24	24	24
字数	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words
字数代码	1000	1000	1000	1000	1000	1000	1000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	125 °C	70 °C	70 °C	70 °C	70 °C	125 °C	70 °C
组织	1KX8	1KX8	1KX8	1KX8	1KX8	1KX8	1KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
封装代码	DIP	DIP	DIP	DIP	DIP	DIP	DIP
封装等效代码	DIP24,.3	DIP24,.3	DIP24,.3	DIP24,.6	DIP24,.6	DIP24,.6	DIP24,.3
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	5 V	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	5.08 mm	5.08 mm	4.826 mm	5.08 mm	5.08 mm	5.715 mm	5.08 mm
最大待机电流	0.12 A	0.1 A	0.09 A	0.1 A	0.1 A	0.12 A	0.1 A
最大压摆率	0.12 mA	0.1 mA	0.09 mA	0.1 mA	0.1 mA	0.12 mA	0.1 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	MILITARY	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	MILITARY	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子节距	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	7.62 mm	7.62 mm	7.62 mm	15.24 mm	15.24 mm	15.24 mm	7.62 mm

CY7C281A-30DMB

CY7C281A-30DMB概述

CY7C281A-30DMB规格参数

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