Preliminary
Datasheet
BCR4CM-16LH
Triac
Medium Power Use
Features
I
T (RMS)
: 4 A
V
DRM
: 800 V
I
FGTI
, I
RGTI
, I
RGT III
: 35 mA or 10mA(I
GT
item:1)
High Commutation
The Product guaranteed maximum junction
temperature 150C
Planar Type
R07DS0255EJ0100
Rev.1.00
Feb 28, 2011
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
12
3
Applications
Switching mode power supply, small motor control, heater control, and other general purpose AC power control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Voltage class
16
800
960
Unit
V
V
Ratings
4
30
3.7
3
0.3
10
2
–40 to +150
–40 to +150
2.0
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 132C
Note3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
R07DS0255EJ0100 Rev.1.00
Feb 28, 2011
Page 1 of 7
BCR4CM-16LH
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
I
DRM
V
TM
BCR4CM-16LH-1
(I
GT
item: 1)
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
BCR4CM-16LH
Unit
Min.
—
—
Typ.
—
—
Max.
2.0
1.6
mA
V
Test conditions
Tj = 150C
V
DRM
applied
Tc = 25C, I
TM
= 6 A
instantaneous
measurement
Tj = 25C, V
D
= 6 V
R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V
R
L
= 6
,
R
G
= 330
Gate trigger voltage
Note2
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
—
—
—
—
—
—
0.2
0.1
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
10
10
10
—
—
3.3
—
—
—
—
—
—
—
—
0.2
0.1
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
35
35
35
—
—
3.3
—
—
V
V
V
mA
mA
mA
V
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of decay of on-state
Note5
commutating current
R
th (j-c)
(di/dt)c
—
2.5
—
Tj = 125C
V
D
= 1/2 V
DRM
Tj = 150C
V
V
D
= 1/2 V
DRM
Note3,4
C/W
Junction to case
A/ms Tj = 125C
(dv/dt)c < 10 V/s
A/ms Tj = 125C
(dv/dt)c < 100 V/s
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm apart from the molded case.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0C/W.
Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
1. Junction temperature
Tj = 125C
2. Peak off-state voltage
V
D
= 400 V
2. Rate of rise of off-state commutating voltage
(dv/dt)c < 10 V/s (I
GT
item : 1)
(dv/dt)c < 100 V/s
Main Current
Main Voltage
(dv/dt)c
R07DS0255EJ0100 Rev.1.00
Feb 28, 2011
Page 2 of 7
BCR4CM-16LH
Preliminary
Performance Curve
Maximum On-State Characteristics
10
2
Tj = 25°C
Rated Surge On-State Current
40
Surge On-State Current (A)
35
30
25
20
15
10
5
0
10
0
10
1
10
2
On-State Current (A)
10
1
10
0
10
−1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
10
2
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
Gate Voltage (V)
V
GM
= 10V
10
1
V
GT
= 1.5V
10
0
P
G(AV)
= 0.3W
P
GM
= 3W
10
2
I
GM
= 2A
I
FGT I
I
RGT I
V
D
= 6V
R
L
= 6Ω
I
RGT III
I
GT
= 35mA
I
GT
item1 = 10mA
10
−1
1
10
V
GD
= 0.1V
10
2
10
3
10
4
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4.0
10
3
10
4
3.2
2.4
10
2
1.6
0.8
V
D
= 6V
R
L
= 6Ω
10
1
–40
0
40
80
120
160
0
10
−1
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0255EJ0100 Rev.1.00
Feb 28, 2011
Page 3 of 7
BCR4CM-16LH
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
Maximum On-State Power Dissipation
7
On-State Power Dissipation (W)
Case Temperature (°C)
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
360° Conduction
Resistive,
inductive loads
140
120 Curves apply regardless
of conduction angle
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
5
6
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Ambient Temperature (°C)
120
100
80
60 All fins are black painted
aluminum and greased
40 Curves apply regardless of
conduction angle
20 Resistive, inductive loads
Natural convection
0
0
1
2
3
100 100 t2.3
60 60 t2.3
Ambient Temperature (°C)
5
140
120 120 t2.3
140
120
100
80
60
40
20
0
0
0.5
1.0
4
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
6
Typical Example
10
5
10
3
Holding Current vs.
Junction Temperature
Typical Example
10
4
10
2
10
3
10
2
–40
0
40
80
120
160
10
1
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS0255EJ0100 Rev.1.00
Feb 28, 2011
Page 4 of 7
BCR4CM-16LH
Latching Current vs.
Junction Temperature
10
3
Distribution
T
2
+, G–
Typical Example
10
2
Preliminary
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Typical Example
Latching Current (mA)
10
1
T
2
–, G–
Typical Example T +, G+
2
Typical Example
0
40
80
120
160
10
0
–40
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
160
140
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
60
40
20
0
10
1
10
2
10
3
10
4
I Quadrant
III Quadrant
Typical Example
Tj = 150°C
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
10
2
Commutation Characteristics (Tj=150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
1
Minimum
Value
(I
GT
item1)
Minimum
Value
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
I
T
= 4A
τ
= 500μs
V
D
= 200V
f = 3Hz
10
1
III Quadrant
I Quadrant
I Quadrant
10
0
10
0
10
1
10
2
10
0
10
0
10
1
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0255EJ0100 Rev.1.00
Feb 28, 2011
Page 5 of 7
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