MTE7410
Visible Light Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
MIN
2.3
100
ITEM
Power Output
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Rise Time
Fall Time
SYMBOL
PO
VF
IR
λp
Δλ
θ
Tr
Tf
740
30
±12
－
－
35
-0.6
-1.9
Cj
P/T
V/T
1MHz ,V=0V
IF=10mA
IF=10mA
pF
%/℃
mV/℃
TYP
4.0
1.8
MAX
UNIT
mW
V
μA
nm
nm
deg.
nS
nS
Junction Capacitance
Temp. Coefficient of PO
Temp. Coefficient of VF
CONDITIONS
IF=20mA
IF=20mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
IFP=20mA
IFP=20mA
FORWARD I-V CHARACTERISTICS
300
RELATIVE POWER vs FORWARD
CURRENT
120
100
80
60
40
20
RADIATION PATTERN
①
Anode
②
Cathode
50
40
30
20
10
0
0
120
FORWARD VOLTAGE(V)
1
2
3
100
200
60
FEATURES
Dimensions (Unit:mm)
FORWARD CURRENT(mA)
RELATIVE POWER OUTPUT(%)
½High
Output Power
½Narrow
Beam Angle
½High
Reliability
½Optical
Switches
½Optical
Sensors
½Medical
Application
SPECTRAL OUTPUT
0
0
10
20
RELATIVE POWER OUTPUT(%)
APPLICATIONS
0
30
40
50
FORWARD CURRENT(mA)
60
-90
-60
-30
0
30
BEAM ANGLE(deg.)
60
90
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
100
80
60
50
40
30
20
10
0
790
-30
0
30
60
THERMAL DERATING CURVE
140
120
100
80
60
40
20
0
90
AMBIENT TEMPERATURE( )
POWER OUTPUT vs TEMPERATURE
IF=10mA
3
2.5
2
1.5
1
0.5
0
-30
0
30
60
90
AMBIENT TEMPERATURE( )
-30
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
RATINGS
50
0.5
5
120
60
40
RELATIVE POWER OUTPUT(%)
20
FORWARD CURRENT(mA)
-20 TO 80
ITEM
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
Power Dissipation
Operating Temp.
Storage Temp.
Junction Temp.
Lead Soldering Temp.*2
0
690
740
WAVELENGTH(nm)
SYMBOL
IF
IFP
VR
PD
Topr
Tstg
Tj
Tls
100
260
UNIT
mA
A
V
mW
℃
℃
℃
℃
RELATIVE POWER OUTPUT(%)
FORWARD VOLTAGE(V)
-30 TO 100
0
30
60
90
AMBIENT TEMPERATURE( )
*1:Tw=10uS,T=10mS
*2:Time 3 Sec max,Position:Up to 2mm from the body
To purchase this part contact
Marktech Optoelectronics at
Marktech
Optoelectronics
www.marktechopto.com
800.984.5337
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