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GBJ10005_1

产品描述10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小96KB,共3页
制造商HY Electronic
官网地址http://www.hygroup.com.tw
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GBJ10005_1概述

10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ10005 thru GBJ1010
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded plastic
REVERSE VOLTAGE
FORWARD CURRENT
GBJ
? .134(3.4)
? .122(3.1)
- 50
to
1000Volts
- 10
Amperes
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198 MAX
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
UNIT
V
V
V
A
A
V
μA
A
2
s
pF
℃/W
technique results in inexpensive product
The plastic material has UL flammability
.118(3.0)*45°
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=110℃ (without heatsink)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 5.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBJ
10005
50
35
50
GBJ
1001
100
70
100
GBJ
1002
200
140
200
GBJ
1004
400
280
400
10.0
3.0
170
1.1
10.0
500
120
55
1.4
-55 to +150
-55 to +150
GBJ
1006
600
420
600
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
GBJ
1008
800
560
800
.106(2.7)
.096(2.3)
+
_
~ ~
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 150mm*150mm*1.6mm Cu plate heatsink.
~ 498 ~
.441(11.2)
.425(10.8)
GBJ
1010
1000
700
1000
classification 94V-0

GBJ10005_1相似产品对比

GBJ10005_1 GBJ10005 GBJ1001 GBJ1004 GBJ1008 GBJ1002 GBJ1006 GBJ1010
描述 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
厂商名称 - HY Electronic HY Electronic - HY Electronic HY Electronic HY Electronic HY Electronic
Reach Compliance Code - unknown unknow unknow unknow unknow unknow unknow
二极管类型 - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

 
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