Thyristors
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Lxx06xx & Qxx06xx & Qxx06xHx Series
Description
RoHS
This 6 Amp bidirectional solid state switch series is
designed for AC switching and phase control applications
such as motor speed and temperature modulation controls,
lighting controls, and static switching relays.
Sensitive
type components guarantee gate control in
Quadrants I & IV as needed for digital control circuitry.
Standard
type components normally operate in Quadrants
I & III triggered from AC line.
Alternistor
type components only operate in quadrants
I, II, & III and are used in circuits requiring high dv/dt
capability.
Features & Benefits
Agency Approval
Agency
Agency File Number
E71693*
* - L Package Only
• RoHS compliant
• Glass – passivated
junctions
• Voltage capability up
to 1000 V
• Surge capability up
to 85 A
• The L-package has
an isolation rating of
2500V
RMS
• Solid-state switching
eliminates arcing or
contact bounce that
create voltage transients
Applications
• No contacts to wear out
from reaction of switching
events
• Restricted (or limited) RFI
generation, depending on
activation point of
sine wave
• Only requires a short gate
activation pulse during
each half-cycle
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q1)
Value
6
400, 600, 800 or 1000
5 to 50
Unit
A
V
mA
Schematic Symbol
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
Typical applications are AC solid-state switches, light
dimmers, power tools, home/brown goods and white
goods appliances.
Alternistor Triacs (no snubber required) are used in
applications with extremely inductive loads requiring the
highest commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
MT2
MT1
G
Absolute Maximum Ratings — Sensitive Triac
(4 Quadrants)
Symbol
I
T(RMS)
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
RMS on-state current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 50mA with 0.1µs rise time
Peak gate trigger current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
f = 120 Hz
t
p
=20μs
Parameter
Lxx06Ly/Lxx06Vy/Lxx06Dy
Lxx06Ry/Lxx06Ny
f = 50 Hz
f = 60 Hz
t
p
= 8.3 ms
T
J
= 110°C
T
J
= 110°C
T
J
= 110°C
T
C
= 80°C
T
C
= 85°C
t = 20 ms
t = 16.7 ms
Value
6
50
60
15
70
4
0.4
-40 to 150
-40 to 110
Unit
A
A
A
2
s
A/μs
A
W
°C
°C
Note: xx = voltage/10, y = sensitivity
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/29/18
Thyristors
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Absolute Maximum Ratings — Standard Triac
Symbol
I
T(RMS)
Parameter
Qxx06Ry / Qxx06Ny
RMS on-state current (full sine wave)
Qxx06Ly
f = 50 Hz
f = 60 Hz
t
p
= 8.3 ms
f = 120 Hz
t
p
=20μs
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
T
C
= 95°C
T
C
= 90°C
t = 20 ms
t = 16.7 ms
Value
6
65
80
26.5
70
4
0.5
-40 to 150
-40 to 125
Unit
A
I
TSM
I
2
t
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 200mA with 0.1µs rise time
Peak gate trigger current
Average gate power dissipation
Storage temperature range
A
A
2
s
A/μs
A
W
°C
°C
Operating junction temperature range
Note: xx = voltage/10, y = sensitivity
Absolute Maximum Ratings — Alternistor Triac
(3 Quadrants)
Symbol
I
T(RMS)
RMS on-state current (full sine wave)
Parameter
Qxx06LHy/Qxx06VHy/Qxx06DHy
Qxx06RHy/Qxx06NHy
T
C
= 95°C
T
C
= 100°C
Qxx06VHy
Qxx06DHy
f = 50 Hz
t = 20 ms
Qxx06LHy
Qxx06RHy
Qxx06NHy
Qxx06VHy
Qxx06DHy
f = 60 Hz
t = 16.7 ms
Qxx06LHy
Qxx06RHy
Qxx06NHy
Qxx06VHy
Qxx06DHy
Value
6
Unit
A
55
80
A
65
85
17
.5
A
2
s
30
70
1.6
0.5
-40 to 150
-40 to 125
A/μs
A
W
°C
°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
It
2
I t Value for fusing
2
t
p
= 8.3 ms
Qxx06LHy
Qxx06RHy
Qxx06NHy
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
di/dt
I
GTM
P
G(AV)
T
stg
T
J
Critical rate of rise of on-state current
Peak gate trigger current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
f = 120 Hz
t
p
≤ 10 μs; I
GT
≤ I
GTM
Note: xx = voltage/10, y = sensitivity
Additional Information
Datasheet
Resources
Samples
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/29/18
Thyristors
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Sensitive Triac
(4 Quadrants)
Symbol
I
GT
V
GT
V
GD
I
H
dv/dt
(dv/dt)c
t
gt
Test Conditions
V
D
= 12V R
L
= 60 Ω
V
D
= 12V R
L
= 60 Ω
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 110°C
I
T
= 100mA
V
D
= V
DRM
Gate Open T
J
= 100°C
(di/dt)c = 3.2 A/ms T
J
= 110°C
I
G
= 2 x I
GT
PW = 15µs I
T
= 8.5 A(pk)
400V
600V
I – II – III
IV
ALL
ALL
Quadrant
MAX.
MAX.
MIN.
MAX.
TYP
.
TYP
.
TYP
.
Value
Lxx06x5
5
5
Lxx06x6
5
10
1.3
0.2
Lxx06x8
10
20
Unit
mA
V
V
10
30
20
1
3.0
10
30
20
2
3.0
20
40
30
2
3.2
mA
V/μs
V/μs
μs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Standard Triac
Symbol
I
GT
V
GT
V
GD
I
H
Test Conditions
V
D
= 12V R
L
= 60 Ω
V
D
= 12V R
L
= 60 Ω
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 125°C
I
T
= 200mA
400V
V
D
= V
DRM
Gate Open T
J
= 125°C
V
D
= V
DRM
Gate Open T
J
= 100°C
600V
800V
1000V
Quadrant
I – II – III
IV
I – II – III
ALL
MAX.
TYP
.
MAX.
MIN.
MAX.
Value
Qxx06x4
25
50
1.3
0.2
50
120
MIN.
100
85
100
TYP
.
TYP
.
4
3.0
4
3.0
50
Qxx06x5
50
75
Unit
mA
V
V
mA
dv/dt
V/μs
(dv/dt)c
t
gt
(di/dt)c = 3.2 A/ms T
J
= 125°C
I
G
= 2 x I
GT
PW = 15µs I
T
= 8.5 A(pk)
V/μs
μs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Alternistor Triac
(3 Quadrants)
Symbol
I
GT
V
GT
V
GD
I
H
Test Conditions
V
D
= 12V R
L
= 60 Ω
V
D
= 12V R
L
= 60 Ω
V
D
= V
DRM
R
L
= 3.3 kΩ T
J
= 125°C
I
T
= 100mA
Qxx06VHy /
Qxx06DHy
I – II – III
I – II – III
I – II – III
Quadrant
MAX.
MAX.
MIN.
MAX.
400V
600V
800V
Qxx06LHy /
Qxx06RHy /
Qxx06NHy
MIN.
400V
600V
800V
1000V
MIN.
TYP
.
Value
Qxx06xH3
10
1.3
0.2
15
75
50
35
400
300
200
75
50
450
350
250
150
20
4.0
25
4.0
Qxx06xH4
35
Unit
mA
V
V
mA
dv/dt
V
D
= V
DRM
Gate Open T
J
= 125°C
V/μs
V
D
= V
DRM
Gate Open T
J
= 100°C
(dv/dt)c
t
gt
(di/dt)c = 3.2 A/ms T
J
= 125°C
I
G
= 2 x I
GT
PW = 15µs I
T
= 8.5 A(pk)
ALL
V/μs
μs
Note: xx = voltage/10, x = package, y = sensitivity
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/29/18
Thyristors
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Static Characteristics
Symbol
V
TM
Test Conditions
I
TM
= 11.3A t
p
= 380 µs
Lxx06xy
T
J
= 25°C
T
J
= 110°C
T
J
= 25°C
Qxx06xy
T
J
= 125°C
T
J
= 100°C
T
J
= 25°C
Qxx06xHy
T
J
= 125°C
T
J
= 100°C
400 - 600V
400 - 600V
400 - 1000V
400 - 800V
1000V
400 - 800V
1000V
400 - 800V
1000V
MAX.
MAX.
Value
1.60
20
0.5
50
2
3
10
20
3
2
Unit
V
μA
mA
μA
mA
I
DRM
/ I
RRM
V
DRM
= V
RRM
μA
mA
Thermal Resistances
Symbol
Parameter
L/Qxx06Ryy / L/Qxx06Nyy
R
θ(J-C)
Junction to case (AC)
L/Qxx06Lyy
L/Qxx06Vyy / L/Qxx06Dyy
L/Qxx06Ryy
R
θ(J-A)
Junction to ambient
L/Qxx06Lyy
L/Qxx06Vyy
Note: xx = voltage, x = package, y = sensitivity, yy = type & sensitivity
Value
1.8
3.3
3.2
45
50
70
Unit
°C/W
°C/W
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
MT2
(
-
)
Figure 2: Normalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
MT2 POSITIVE
(Positive Half Cycle)
4.0
+
MT2
(+)
I
GT
GATE
MT1
MT1
I
GT
(T
J
= 25°C)
I
GT
GATE
3.0
I
GT
MT2
(
-
)
MT2
I
GT
GATE
MT1
REF
Ratio of
I
GT
-
I
GT
GATE
REF
QII QI
QIII QIV
(+)
REF
2.0
+
I
GT
1.0
MT1
REF
MT2 NEGATIVE
(Negative Half Cycle)
-
0.0
-65
-40
-15
10
35
60
85
110
125
Junction Temperature (T
J
)- °C
NOTE: Alternistors will not operate in QIV
Note: Alternistors will not operate in QIV
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/29/18
Thyristors
6 Amp Sensitive, Standard & Alternistor (High Commutation) Triacs
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
4.0
2.0
I
H
(T
J
= 25°C)
3.0
V
GT
(T
J
= 25°C)
1.5
I
H
2.0
V
GT
1.0
Ratio of
1.0
Ratio of
0.5
0.0
-65
-40
-15
10
35
60
85
110
125
0.0
-65
-40
-40
10
35
60
85
110
125
Junction Temperature (T
J
)- °C
Junction Temperature (T
J
)- ºC
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
18
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current (Sensitive Triac)
120
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
Maximum Allowable Case Temperature
(T
C
) - °C
Average On-State Power Dissipation
(P
D(AV)
) - Watts
110
100
Lxx06Ry
90
Lxx06Ly
Lxx06Vy
Lxx06Dy
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as shown
on Dimensional Drawings
0
1
2
3
4
5
6
7
80
70
60
RMS On-State Current (I
T(RMS)
) - Amps
RMS On-State Current (I
T(RMS)
) - Amps
Figure 7: Maximum Allowable Case Temperature
vs. On-State Current (Standard Triac)
130
Figure 8: Maximum Allowable Case Temperature
vs. On-State Current (Alternistor Triac)
130
Maximum Allowable Case Temperature
(T
C
) - °C
Maximum Allowable Case Temperature
(T
C
) - °C
120
110
100
90
80
70
60
0
1
2
3
4
5
6
7
Qxx06Ly
Qxx06Ry
Qxx06Ny
120
110
100
90
80
70
60
0
1
2
3
4
5
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as shown
on Dimensional Drawings
Qxx06LHy
Qxx06VHy
Qxx06DHy
Qxx06RHy
Qxx06NHy
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
CASE TEMPERATURE: Measured as shown
on Dimensional Drawings
6
7
RMS On-State Current (I
T(RMS)
) - Amps
RMS On-State Current (I
T(RMS)
) - Amps
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/29/18
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
