TO
-22
0A
B
BUK754R0-55B
N-channel TrenchMOS standard level FET
Rev. 5 — 22 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain current
total power
dissipation
drain-source
on-state resistance
Conditions
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
55
75
300
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 7;
see
Figure 12
-
3.4
4
mΩ
NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
Quick reference data
…continued
Parameter
non-repetitive
drain-source
avalanche energy
gate-drain charge
Conditions
I
D
= 75 A; V
sup
≤
55 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
V
GS
= 10 V; I
D
= 25 A;
V
DS
= 44 V; T
j
= 25 °C;
see
Figure 13
Min
-
Typ
-
Max Unit
1.2
J
Table 1.
Symbol
E
DS(AL)S
Avalanche ruggedness
Dynamic characteristics
Q
GD
-
25
-
nC
[1]
Continuous current is limited by package.
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK754R0-55B
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78A
Type number
BUK754R0-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 22 April 2011
2 of 14
NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 4
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
55 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
see
Figure 3
[4][5][6][
7]
[2][1]
[1]
[1]
[2][3]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
Max
55
55
20
75
193
75
774
300
175
175
193
75
774
1.2
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
J
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK754R0-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 22 April 2011
3 of 14
NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
200
I
D
(A)
150
001aaf871
120
P
der
(%)
80
03na19
100
(1)
40
50
0
25
75
125
T
mb
(°C)
175
0
0
50
100
150
T
mb
(°C)
200
(1) Capped at 75 A due to package.
Fig 1.
Continuous drain current as a function of
mounting base temperature
10
2
I
AL
(A)
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aab677
(1)
10
(2)
(3)
1
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
(1) Single-pulse; T
j
= 25 °C.
(2) Single-pulse; T
j
= 150 °C.
(3) Repetitive
Fig 3.
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK754R0-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 22 April 2011
4 of 14
NXP Semiconductors
BUK754R0-55B
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
(1)
03ng55
t
p
= 10
μ
s
Limit R
DSon
= V
DS
/ I
D
100
μ
s
1 ms
10 ms
100 ms
DC
10
1
10
-1
1
10
V
DS
(V)
10
2
(1) Capped at 75 A due to package.
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see
Figure 5
vertical in still air
Min
-
-
Typ
-
60
Max
0.5
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
-1
δ
= 0.5
0.2
0.1
0.05
P
03ng56
10
-2
0.02
δ
=
t
p
T
single shot
10
-3
10
-6
t
p
T
t
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK754R0-55B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 22 April 2011
5 of 14
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