Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN
参数名称 | 属性值 |
厂商名称 | KEC |
零件包装代码 | TO-220AB |
包装说明 | TO-220IS, 3 PIN |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
外壳连接 | ISOLATED |
最大集电极电流 (IC) | 1.5 A |
集电极-发射极最大电压 | 180 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 120 |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 20 W |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 100 MHz |
KTA1659A-Y | KTA1659A-O | KTA1659A-Y-U/PF | KTA1659Y | KTA1659O | |
---|---|---|---|---|---|
描述 | Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN | Power Bipolar Transistor, 1.5A I(C), 180V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN | 额定功率:20W 集电极电流Ic:1.5A 集射极击穿电压Vce:180V 晶体管类型:PNP PNP,Vceo=-180V,Ic=-1.5A,hfe=120~240 | Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN | Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220IS, 3 PIN |
厂商名称 | KEC | KEC | - | KEC | KEC |
零件包装代码 | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB |
包装说明 | TO-220IS, 3 PIN | TO-220IS, 3 PIN | - | TO-220IS, 3 PIN | TO-220IS, 3 PIN |
针数 | 3 | 3 | - | 3 | 3 |
Reach Compliance Code | unknown | unknown | - | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 |
外壳连接 | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED |
最大集电极电流 (IC) | 1.5 A | 1.5 A | - | 1.5 A | 1.5 A |
集电极-发射极最大电压 | 180 V | 180 V | - | 160 V | 160 V |
配置 | SINGLE | SINGLE | - | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 120 | 70 | - | 120 | 70 |
JEDEC-95代码 | TO-220AB | TO-220AB | - | TO-220AB | TO-220AB |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | - | 1 | 1 |
端子数量 | 3 | 3 | - | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | - | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | PNP | PNP | - | PNP | PNP |
最大功率耗散 (Abs) | 20 W | 20 W | - | 20 W | 20 W |
表面贴装 | NO | NO | - | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | - | SINGLE | SINGLE |
晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON |
标称过渡频率 (fT) | 100 MHz | 100 MHz | - | 100 MHz | 100 MHz |
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