18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 11-Jan-10
D1001-BD
Chip Device Layout
Features
Ultra Wide Band Driver Amplifier
Fiber Optic Modulator Driver
17.0 dB Small Signal Gain
5.0 dB Noise Figure
30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB across the band. The
device also includes 30.0 dB gain control and a +15
dBm P1dB compression point. This MMIC uses Mimix
Broadband’s GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for microwave,
millimeter-wave and wideband military applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
1
+6.0 VDC
220 mA
+0.3 VDC
+15 dBm
-65 to +165 ºC
-55 to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
2
Output Return Loss (S22)
2
Small Signal Gain (S21)
2
Gain Flatness ( S21)
Gain Control
Reverse Isolation (S12)
2
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
1
Output Third Order Intercept Point (OIP3)
1
Drain Bias Voltage (Vd)
Gain Control Bias (Vg)
Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
18.0
5.0
6.0
13.0
-
-
30.0
-
-
-
-
-2.0
-
Typ.
-
10.0
11.0
17.0
+/-1.0
30.0
40.0
5.0
+15.0
+24.0
+5.0
0.0
160
Max.
50.0
-
-
-
-
-
-
-
-
-
+5.5
+0.1
190
(1) Measured using constant current.
(2) Unless otherwise indicated Min/Max over 18.0-50.0 GHz and biased at Vd=5V, Id=160 mA
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 11-Jan-10
D1001-BD
Distributed Amplifier Measurements (On-Wafer
1
)
22
21
XD1001-BD, Vd=5.0 V, Id=150 mA (4631 Devices)
0
-10
XD1001-BD, Vd=5.0 V, Id=150 mA (5039 Devices)
Reverse Isolation (dB)
Frequency (GHz)
Max
Median
Mean
-3sigma
20
19
-20
-30
-40
-50
-60
-70
18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0
Gain (dB)
18
17
16
15
14
13
12
18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0
Frequency (GHz)
Max
0
-5
Median
Mean
-3sigma
0
XD1001-BD, Vd=5.0 V, Id=150 mA (4786 Devices)
XD1001-BD, Vd=5.0 V, Id=150 mA (4751 Devices)
Input Return Loss (dB)
-5
Output Retrun Loss (dB)
Frequency (GHz)
Max
Median
Mean
-3sigma
g
-10
-15
-20
-25
-30
-35
-40
-10
-15
-20
-25
18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0
-45
18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0
Frequency (GHz)
Max
Median
Mean
-3sigma
g
20
19
XD1001-BD, Vd=5.0 V, Id=150 mA (~35 Devices)
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
18.0
XD1001-BD, Vd=5.0 V, Id=150 mA (~35 Devices)
Output Power P1dB (dBm)
18
16
15
14
13
12
11
10
18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0 38.0 40.0 42.0 44.0 46.0 48.0 50.0
Noise Figure (dB)
17
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
Frequency (GHz)
Max
Median
Mean
-3sigma
Max
Frequency (GHz)
Median
Mean
Min
Note [1] Measurements –
On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application
note.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 11-Jan-10
D1001-BD
Distributed Amplifier Measurements (On-Wafer
1
) (cont.)
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
10
20
XD1001-BD, Vd=5.0 V, Id=Various
30
40
50
60
70
80
90
100 110 120 130 140 150
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-2
-1.8
XD1001-BD, Vd=5.0 V, Id=Various
Gain (dB)
Gain (dB)
-1.6
-1.4
-1.2
-1
36 GHz
-0.8
-0.6
41 GHz
-0.4
-0.2
0
0.2
Drain Current, Id (mA)
36 GHz
7.0
6.5
6.0
Gate Voltage, Vg (V)
41 GHz
7.0
6.5
6.0
XD1001-BD, Vd=3.0 V, Id=Various
XD1001-BD, Vd=Various, Id=150 mA
Noise Figure (dB)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
Vg=-0.3 V
g
36.0
38.0
Vg=-0.4 V
g
40.0
Noise Figure (dB)
5.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
20.0
22.0
24.0
26.0
28.0
30.0
32.0
34.0
36.0
38.0
40.0
Frequency (GHz)
Vg=0 V
g
Vg=-0.1 V
g
Vg=-0.2 V
g
27
Frequency (GHz)
Vd=3.0 V
Vd=4.0 V
Vd=5.0 V
XD1001-BD, Vd=5.0 V, Id=Various, Pin=-15 dBm/Tone
Output Third Order Intercept (dBm)
26
25
24
23
22
21
20
19
20.0
22.0
24.0
Vg=0 V
26.0
Vg=-0.1 V
28.0
30.0
Vg=-0.2 V
32.0
34.0
36.0
Frequency (GHz)
Vg=-0.3 V
Note [1] Measurements –
On-Wafer data has been taken using bias conditions as shown. Measurements are referenced 150 um in from RF In/Out
pad edge. For optimum performance Mimix T-pad transition is recommended. For additional information see the Mimix “T-Pad Transition” application
note.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 11-Jan-10
D1001-BD
S-Parameters (On-Wafer
1
)
Typcial S-Parameter Data for XD1001-BD
Vd=5.0 V, Id=149 mA
Frequency
(GHz)
14.0
14 0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
37 0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
45.0
46.0
47.0
48.0
49.0
50.0
S11
(Mag)
0.339
0 339
0.318
0.296
0.277
0.263
0.248
0.227
0.219
0.218
0.222
0.225
0.233
0.242
0.250
0.249
0.248
0.249
0.252
0.252
0.251
0.268
0.291
0.307
0.331
0 331
0.370
0.384
0.380
0.390
0.399
0.407
0.417
0.407
0.402
0.436
0.438
0.426
0.412
S11
(Ang)
-105.95
105 95
-109.42
-113.59
-118.09
-122.98
-128.13
-130.91
-133.08
-136.80
-139.91
-143.34
-150.18
-157.65
-164.41
-172.29
-178.25
177.08
171.40
168.86
169.12
165.08
161.35
159.48
156.28
156 28
150.02
144.92
139.70
136.35
132.68
128.89
126.10
124.13
124.74
122.89
121.54
118.51
114.78
S21
(Mag)
4.484
4 484
4.959
5.454
5.957
6.452
6.886
7.221
7.502
7.627
7.672
7.656
7.596
7.519
7.465
7.404
7.394
7.445
7.507
7.606
7.695
7.704
7.655
7.542
7.423
7 423
7.168
6.983
6.920
6.827
6.827
6.929
7.019
6.992
6.884
6.794
6.696
6.662
7.002
S21
(Ang)
-64.44
64 44
-81.25
-98.28
-115.37
-132.70
-150.61
-168.63
173.62
155.96
138.78
122.19
106.11
90.71
75.62
60.84
46.58
32.02
17.23
2.06
-13.87
-29.86
-45.93
-62.26
-78.77
78 77
-94.50
-109.65
-125.06
-140.84
-156.36
-172.64
169.64
150.34
131.08
112.53
92.46
70.96
45.72
S12
(Mag)
0.0024
0 0024
0.0029
0.0036
0.0043
0.0050
0.0056
0.0065
0.0068
0.0073
0.0077
0.0075
0.0079
0.0074
0.0078
0.0078
0.0077
0.0071
0.0073
0.0075
0.0079
0.0075
0.0079
0.0079
0.0088
0 0088
0.0083
0.0090
0.0080
0.0087
0.0090
0.0091
0.0093
0.0094
0.0097
0.0099
0.0095
0.0098
0.0101
S12
(Ang)
151.71
151 71
146.08
142.13
129.03
119.05
106.79
94.16
78.94
65.41
50.14
37.52
18.78
5.49
-6.83
-24.58
-41.51
-55.57
-69.66
-85.07
-104.67
-121.74
-135.09
-152.32
-165.75
165 75
172.51
160.60
145.41
134.33
119.70
106.25
91.50
78.26
58.70
33.85
21.18
-2.17
-25.75
S22
(Mag)
0.566
0 566
0.536
0.504
0.469
0.427
0.379
0.325
0.271
0.218
0.170
0.129
0.096
0.070
0.059
0.055
0.060
0.083
0.108
0.141
0.178
0.211
0.243
0.275
0.305
0 305
0.334
0.351
0.352
0.352
0.345
0.331
0.325
0.313
0.302
0.306
0.285
0.278
0.258
S22
(Ang)
42.43
42 43
29.71
16.92
3.70
-9.98
-24.20
-38.39
-53.12
-66.82
-79.26
-89.38
-98.45
-103.92
-103.19
-99.36
-99.54
-106.68
-120.07
-130.95
-143.90
-159.27
-172.40
174.70
163.36
163 36
151.74
139.42
129.53
121.51
112.70
106.19
100.85
94.96
93.66
88.79
82.69
78.04
68.40
Note [1] S-Parameters –
On-Wafer S-Parameters have been taken using bias conditions as shown. Measurements are referenced 150 um in from RF
In/Out pad edge.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
January 2010 - Rev 11-Jan-10
D1001-BD
0.396
(0.016)
Mechanical Drawing
1.300
(0.051)
2
3
0.922
(0.036)
0.379
(0.015)
0.0
1
4
0.0
1.555
(0.061)
(Note: Engineering designator is 30DA0445)
1.950
(0.077)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.572 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd)
Bond Pad #3 (RF Out)
Bond Pad #4 (Vg)
Bypass Capacitors
- See App Note [2]
Vd
Bias Arrangement
Vd
2
3
RF Out
RF Out
XD1001-BD
RF In
RF In
1
4
Vg
Vg
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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