GWM100-0085X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G1
S1
G3
S3
G5
S5
L1
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 85 V
= 03 A
1
I
D25
R
DSon typ.
= 5.5 mW
Straight leads
Surface Mount Device
G2
S2
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
D110
I
F25
I
F90
I
F110
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 110°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
T
C
= 110°C (diode)
Conditions
Conditions
T
J
= 25°C to 150°C
Maximum Ratings
85
±
20
103
77
68
V
V
A
A
A
A
A
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
(T
J
= 25°C, unless otherwise specified)
t
min.
typ.
5.5
12.7
2.0
100
114
30
35
tbd
tbd
tbd
tbd
tbd
tbd
tbd
1.3
R
DSon 1)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
1)
on chip level at
V
GS
= 10 V; I
D
= 75 A
V
DS
= 20 V; I
D
= 250 µA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
a
t
V
GS
= 10 V; V
DS
= 42 V; I
D
= 75 A
e
inductive load
V
GS
= 10 V; V
DS
= 42 V
I
D
= 75 A; R
G
= 39
Ω;
T
J
= 125°C
n
t
with heat transfer paste (IXYS test setup)
V
DS
= I
D
·(R
DS(on)
+ R
Pin to Chip
)
IXYS reserves the right to change limits, test conditions and dimensions.
iv
tbd
tbd
tbd
Characteristic Values
max.
6.2
4.0
5
0.2
mW
mW
V
µA
µA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0
1.6
K/W
K/W
e
20110307
© 2011 IXYS All rights reserved
1-3
GWM100-0085X1
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
V
SD
t
rr
Q
RM
I
RM
(diode) I
F
= 100 A; V
GS
= 0 V
I
F
= 100 A; -di
F
/dt = 800 A/µs; V
R
= 24 V
T
VJ
= 125°C
typ.
0.9
tbd
tbd
tbd
max.
1.2
V
ns
µC
A
Component
Symbol
I
RMS
T
J
T
stg
V
ISOL
F
C
Symbol
I
ISOL
< 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Conditions
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
Maximum Ratings
300
-55...+175
-55...+125
1000
50 - 250
A
°C
°C
V~
N
Characteristic Values
min.
typ.
1.0
160
max.
C
P
Weight
1)
coupling capacity between shorted
pins and mounting tab in the case
V
DS
= I
D
·(R
DS(on)
+ R
Pin to Chip
)
t
IXYS reserves the right to change limits, test conditions and dimensions.
e
n
t
a
t
iv
pF
g
25
20110307
R
pin to chip 1)
L+ to L1/L2/L3 or L- to L1/L2/L3
e
mW
© 2011 IXYS All rights reserved
2-3
GWM100-0085X1
S
traight
L
eads
GWM 100-085X1-SL
37,5 +0,20
(11x) 3 ±0,05
1,5
1 ±0,05
5 ±0,05
1 ±0,05
0,5 ±0,02
25 +0,20
53 ±0,15
4,5
12 ±0,05
4 ±0,05
(3x) 6 ±0,05
iv
37,5 +0,20
1,5
S
urface
M
ount
D
evice
GWM 100-085X1-SMD
(11x) 3 ±0,05
1 ±0,05
5 ±0,05
0,5 ±0,02
R1 ±0,2
a
t
25 +0,20
39 ±0,15
t
2,1
n
e
1 ±0,05
5 ±0,10
4,5
12 ±0,05
4 ±0,05
(3x) 6 ±0,05
5° ±2°
e
Part Name &
Packing Unit Marking
GWM 100-0085X1 - SL
GWM 100-0085X1 - SMD
2,1
t
Leads
Ordering
Standard
Standard
Part Marking
GWM 100-0085X1
GWM 100-0085X1
Delivering Mode
Blister
Blister
Base Qty.
28
28
Ordering
Code
tbd
tbd
20110307
Straight
SMD
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
3-3
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