GWM 120-0075X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G1
S1
G3
S3
G5
S5
L1
L2
L3
G4
S4
G6
S6
L-
V
DSS
= 75 V
= 110 A
I
D25
R
DSon typ.
= 4.0 mW
Straight leads
Surface Mount Device
G2
S2
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C (diode)
T
C
= 90°C (diode)
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
75
±
20
110
85
110
80
V
V
A
A
A
A
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
4.0
7.2
2
T
VJ
= 25°C
T
VJ
= 125°C
0.1
0.2
115
30
30
130
100
500
100
T
VJ
= 125°C
0.20
0.50
0.01
1.3
1.0
1.6
max.
4.9
8.4
4
1
mW
mW
V
µA
mA
µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
K/W
K/W
R
DSon
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
recoff
R
thJC
R
thJH
on chip level at
V
GS
= 10 V; I
D
= 60 A
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V
V
GS
=
±
20 V; V
DS
= 0 V
T
VJ
= 25°C
T
VJ
= 125°C
V
GS
= 10 V; V
DS
= 36 V; I
D
= 25 A
V
GS
= 10 V; V
DS
= 30 V
I
D
= 80 A; R
G
= 39
Ω
inductive load
with heat transfer paste (IXYS test setup)
IXYS reserves the right to change limits, test conditions and dimensions.
20110407d
© 2011 IXYS All rights reserved
1-6
GWM 120-0075X1
Source-Drain Diode
Symbol
Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
V
SD
t
rr
Q
RM
I
RM
(diode) I
F
= 80 A; V
GS
= 0 V
I
F
= 80 A; -di
F
/dt = 800 A/µs
V
R
= 30 V; T
J
= 125°C
typ.
0.9
55
0.9
30
max.
1.2
V
ns
µC
A
Component
Symbol
I
RMS
T
VJ
T
stg
V
ISOL
F
C
Symbol
R
pin to chip
I
ISOL
< 1 mA, 50/60 Hz, f = 1 minute
mounting force with clip
Conditions
with heatsink compound
coupling capacity between shorted
pins and mounting tab in the case
typ.
Conditions
per pin in main current paths (P+, N-, L1, L2, L3)
may be additionally limited by external connections
Maximum Ratings
300
-55...+175
-55...+125
1000
50 - 250
A
°C
°C
V~
N
Characteristic Values
min.
typ.
0.6
160
25
max.
mW
C
P
Weight
pF
g
IXYS reserves the right to change limits, test conditions and dimensions.
20110407d
© 2011 IXYS All rights reserved
2-6
GWM 120-0075X1
S
traight
L
eads
37,5 +0,20
(11x) 3 ±0,05
1,5
1 ±0,05
GWM 120-0075X1-SL
5 ±0,05
1 ±0,05
0,5 ±0,02
25 +0,20
53 ±0,15
2,1
4,5
12 ±0,05
4 ±0,05
(3x) 6 ±0,05
S
urface
M
ount
D
evice
37,5 +0,20
1,5
(11x) 3 ±0,05
1 ±0,05
GWM 120-0075X1-SMD
5 ±0,05
0,5 ±0,02
R1 ±0,2
25 +0,20
39 ±0,15
4,5
12 ±0,05
4 ±0,05
(3x) 6 ±0,05
Leads
Straight
SMD
Ordering
Standard
Standard
Part Name &
Packing Unit Marking
GWM 120-0075X1 - SL
GWM 120-0075X1 - SMD
IXYS reserves the right to change limits, test conditions and dimensions.
2,1
1 ±0,05
5 ±0,10
5° ±2°
Part Marking
GWM 120-0075X1
GWM 120-0075X1
Delivering Mode
Blister
Blister
Base Qty.
28
28
Ordering
Code
505 960
505 581
20110407d
© 2011 IXYS All rights reserved
3-6
GWM 120-0075X1
1,2
I
DSS
= 0.25 mA
250
V
DS
= 30 V
V
DSS
[V] Normalized
1,1
I
D
[A]
200
150
100
50
0
TJ = 125°C
TJ = 25°C
1,0
0,9
0,8
0,7
-25
0
25
50
75
100
125
150
0
1
2
T
J
[°C]
3
4
V
GS
[V]
5
6
7
Fig. 1 Drain source breakdown voltage V
DSS
vs. junction temperature T
VJ
300
250
200
I
D
[A]
150
100
50
0
5.5 V
5V
4.5 V
4V
Fig. 2 Typical transfer characteristic
V
GS
=
20 V
15 V
10 V
300
7V
6.5 V
6V
T
J
= 25°C
250
200
I
D
[A]
V
GS
=
20 V
15 V
10 V
7V
TJ = 125°C
6.5 V
6V
150
5.5 V
100
50
0
5V
4.5 V
4V
0
1
2
V
DS
[V]
3
4
5
6
0
1
2
3
V
DS
[V]
4
5
6
Fig. 3 Typical output characteristic
Fig. 4 Typical output characteristic
2,0
R
DS(ON)
Normalized
1,6
V
GE
= 10 V
I
D
= 125 A
12
10
8
6
4
R
DS(on)
[mΩ]
R
DS(on)
4,0
4 V 4.5 V
3,5
R
DS(ON)
Normalized
3,0
2,5
2,0
5V
5.5 V
6V
6.5 V
V
GS
= 10 V
I
D
= 125 A
1,2
R
DS(on)
normalized
0,8
0,4
-25
0
25
50
75
100
TJ = 125°C
7V
1,5
10 V
1,0
0,5
0
50
100
150
I
D
[A]
200
250
125
150
2
15 V
20 V
300
T
J
[°C]
Fig. 5 Drain source on-state resistance R
DS(on)
versus junction temperature T
J
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 6 Drain source on-state
resistance R
DS(on)
versus I
D
20110407d
© 2011 IXYS All rights reserved
4-6
GWM 120-0075X1
14
12
10
I
D
= 125 A
T
J
= 25°C
140
120
100
V
GS
[V]
6
4
2
0
V
DS
= 55 V
I
D
- [A]
140
8
V
DS
= 15 V
80
60
40
20
0
20
40
60
80
100
120
0
0
20
40
60
80 100 120 140 160 180
Q
G
[nC]
Fig.7 Gate charge characteristic
T
J
[°C]
Fig. 8 Drain current I
D
vs. case temperature T
C
0.5
0.4
V
DS
= 30 V
V
GS
= +10/0 V
R
G
= 39
Ω
T
J
= 125°C
t
d(on)
t
r
200
160
120
80
40
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
DS
= 30 V
V
GS
= +10/0 V
R
G
= 39
Ω
T
J
= 125°C
t
d(off)
1000
900
800
700
500
400
300
200
100
0
600
E
on
, E
rec(off)
[mJ]
E
off
[mJ]
0.2
0.1
0.0
t [ns]
E
on
E
rec(off)
x10
E
off
t
f
0
20
40
60
80
100
120
140
0
0
20
40
60
80
100
120
140
I
D
[A]
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
1.50
1.25
300
250
200
I
D
[A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
1.8
1.6
1.4
1.2
1800
1600
1400
t
d(off)
E
on
, E
rec(off)
[mJ]
1.00
0.75
0.50
0.25
0.00
V
DS
= 30 V
V
GS
= +10/0 V
I
D
= 125 A
T
J
= 125°C
t
r
t
d(on)
V
DS
= 30 V
V
GS
= +10/0 V
I
D
= 125 A
T
J
= 125°C
1200
E
off
[mJ]
t [ns]
150
100
E
on
E
rec(off)
x10
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
E
off
t
f
800
600
400
200
50
0
0
20
40
60
80
100
120
R
G
[Ω]
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
Fig. 12
R
G
[Ω]
100
120
0
Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
20110407d
© 2011 IXYS All rights reserved
5-6
t [ns]
1.0
1000
t [ns]
0.3
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