2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Rev. V4
Features
•
Available in JAN, JANTX, JANTXV per MIL-PRF-19500/504
•
TO-3 (TO-204AA) Package
•
Suitable for General Purpose High Current, High Gain Amplifier and
Switching Applications
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
I
C
= 100 mA dc
2N6283
2N6284
V
CE
= 40 V dc, 2N6283
V
CE
= 50 V dc, 2N6284
V
CE
= 80 V dc, V
BE
=
-1.5
V dc, 2N6283
V
CE
= 100 V dc, V
BE
=
-1.5
V dc, 2N6284
V
EB
= 7 V dc
I
C
= 1 A dc, V
CE
= 3 V dc
I
C
= 10 A dc, V
CE
= 3 V dc
I
C
= 20 A dc, V
CE
= 3 V dc
I
C
= 20 A dc, I
B
= 200 mA dc
I
C
= 10 A dc, I
B
= 40 mA dc
I
C
= 20 A dc, I
B
= 200 mA dc
I
C
= 10 A dc, V
CE
= 3 V dc
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Base Cutoff Current
V
(BR)CEO
V dc
I
CEO
I
CEX1
I
EBO
mA dc
mA dc
mA dc
80
100
—
—
—
1500
1250
500
—
—
—
—
1.0
0.01
2.5
Forward Current Transfer Ratio
Collector
-
Emitter Saturation Voltage
Base
-
Emitter Saturation Voltage
Base
-
Emitter Voltage
Dynamic Characteristics
Magnitude of Common
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Small-Signal Short-Circuit
Forward Current Transfer Ratio
Output Capacitance
Switching Characteristics
Turn-On Time
Turn-Off Time
h
FE
-
18000
3.0
2.0
4.0
2.8
V
CE(sat)1
V dc
V
CE(sat)2
V
BE(sat)
V
BE(on)
V dc
V dc
V
CE
= 3 V dc; I
C
= 10 A dc; f = 1.0 MHz
V
CE
= 3 V dc; I
C
= 10 A dc; f = 1 kHz
V
CB
= 10 V dc; I
E
= 0; 100 kHz ≤ f ≤ 1 MHz
| h
fe
|
h
fe
C
obo
-
-
pF
8
700
—
80
—
350
V
CC
= 30 Vdc; I
C
= 10 A dc; I
B
= 40 mA dc
V
CC
= 30 Vdc; I
C
= 10 A dc; I
B1
= I
B2
= 40 mA dc
t
on
t
off
µs
µs
—
—
2.0
10
1
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Rev. V4
Parameter
Test Conditions
T
A
= +150
o
C
V
CE
= 80 V dc; V
BE
=
-1.5
V dc; 2N6283
V
CE
= 100 V dc; V
BE
=
-1.5
V dc; 2N6284
T
A
= +150
o
C
I
C
= 10 A dc; I
B
= 40 mA dc
T
A
=
-55
o
C
V
CE
= 3 V dc; I
C
= 10 A dc
Symbol Units
Min.
Max.
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Saturation Voltage
I
CEX2
mA dc
—
—
200
5.0
2.0
V
CE(sat)3
V dc
h
FE4
Absolute Maximum Ratings (T
A
= +25
o
C unless otherwise noted)
Ratings
Collector
-
Emitter Voltage
Collector
-
Base Voltage
Emitter
-
Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ T
C
= +25°C
(1)
@ T
C
= +100°C
(2)
Operating & Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
2N6283
80
80
7
20
0.5
175
87.5
-65
to +200
2N6284
100
100
Units
V dc
V dc
V dc
A dc
A dc
W
T
J
, T
STG
°C
(1)
(2)
Derate linearly at 1.17 W/
o
C above T
C
> +25
o
C (see figure 2 of MIL-PRF-19500/504.
Derate linearly at .875 W/
o
C above T
C
> +100
o
C.
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max. Value
0.857°C/W
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
T
C
= +25 °C + 10
o
C,
-0
o
; I Cycle; t = 1.0 s
V
CE
= 8.75 V dc; I
C
= 20 A dc
V
CE
= 30 V dc; I
C
= 5.8 A dc
V
CE
= 80 V dc; I
C
= 100 mA dc 2N6283
V
CE
= 100 V dc; I
C
= 100 mA dc 2N6284
2
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Rev. V4
Outline Drawing (TO-3)
3
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Rev. V4
Outline Drawing (TO-3)
4
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N6283 & 2N6284
NPN Darlington Power Silicon Transistor
Rev. V4
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Components as a service to its customers and may be used for informational purposes only. Except as provided in VPT
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Components assumes no liability whatsoever. VPT Components assumes no responsibility for errors or omissions in these
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Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or
incompatibilities arising from future changes to its specifications and product descriptions. No license, express or implied, by
estoppels or otherwise, to any intellectual property rights is granted by this document.
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VPT Components products are not intended for use in medical, lifesaving or life sustaining applications. VPT Components
customers using or selling VPT Components products for use in such applications do so at their own risk and agree to fully
indemnify VPT Components for any damages resulting from such improper use or sale.
5
VPT Comonents and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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