2N5671 & 2N5672
NPN High Power Silicon Transistor
Rev. V2
Features
•
Available in JAN, JANTX, JANTXV and JANS per
MIL-PRF-19500/488
•
TO-3 (TO-204AA) Package
•
Designed for Use in High Current Fast Switching
Applications
Electrical Characteristics (T
A
= +25
o
C unless otherwise noted)
Parameter
Test Conditions
Symbol Units
Min.
Max.
Collector
-
Emitter Breakdown Voltage
I
C
= 200 mA dc, 2N5671
I
C
= 200 mA dc, 2N5672
V
CE
= 120 V dc, 2N5671
V
CE
= 150 V dc, 2N5672
V
EB
= 7.0 V dc
V
CE
= 110 V dc, V
BE
= 1.5 V dc, 2N5671
V
CE
= 135 V dc, V
BE
= 1.5 V dc, 2N5672
V
CE
= 80 V dc
V
(BR)CEO
V dc
90
120
—
—
—
—
—
25
25
10
250
250
10
Collector
-
Base Cutoff Current
Emitter
-
Base Cutoff Current
Collector
-
Emitter Cutoff Current
Collector
-
Emitter Cutoff Current
I
CBO
I
EBO
I
CEX1
I
CEO
mA dc
mA dc
µA dc
mA dc
Forward Current Transfer Ratio
V
CE
= 2.0 Vdc; I
C
= 15 A dc
V
CE
= 5.0 Vdc; I
C
= 20 A dc
I
C
= 15 A dc: I
B
= 1.2 A dc
I
C
= 30 A dc: I
B
= 6.0 A dc
I
B
= 1.2 A dc; I
C
= 15 A dc
T
A
= +150
o
C
V
CE
= 100 V dc, V
BE
=
-1.5
V dc, 2N5671
V
CE
= 100 V dc, V
BE
=
-1.5
V dc, 2N5672
T
A
=
-65
o
C
V
CE
= 2.0 V dc; I
C
= 15 A dc
h
FE
-
20
20
—
—
100
Collector
-
Emitter Saturation Voltage
Emitter
-
Base Saturation Voltage
V
CE(sat)1
V dc
V
CE(sat)2
V
BE(SAT)
V dc
0.75
5.0
1.5
15
10
Collector
-
Emitter Cutoff Current
I
CEX2
mA dc
—
Forward-Current Transfer Ratio
h
FE3
-
10
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
Open Circuit Output Capacitance
V
CE
= 10 V dc; I
C
= 2.0 A dc; f = 5.0 MHz
V
CB
= 10 V dc; I
E
= 0; 100 kHz ≤ f ≤ 1 MHz
| h
fe
|
C
obo
pF
10
—
40
900
1
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5671 & 2N5672
NPN High Power Silicon Transistor
Rev. V2
Absolute Maximum Ratings (T
C
= +25
o
C unless otherwise noted)
Ratings
Collector
-
Emitter Voltage
2N5671
2N5672
Collector
-
Base Voltage
2N5671
2N5672
Emitter
-
Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ T
A
= +25°C
1
@ T
C
= +25°C
2
Operating & Storage Temperature Range
1.
2.
Derate linearly @ 34.2 mW / °C for T
A
= 25 °C
Derate linearly @ 800 mW / °C for T
C
= 25 °C
Symbol
V
CEO
Value
90 V dc
120 V dc
120 V dc
150 V dc
7.0 V dc
10 V dc
30 A dc
6.0 W
140 W
-65°C
to +200°C
V
CBO
V
EBO
I
B
I
C
P
T
T
J
, T
STG
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Switching Characteristics
V
CC
= 30 + 2 V dc; I
C
= 15 A dc; I
B1
= 1.2 A dc
V
CC
= 30 + 2 V dc; I
C
= 15 A dc; I
B1
= I
B2
= 1.2 A dc
Symbol
R
θJC
Symbol
t
on
t
off
Max. Value
1.25°C/W
Max. Value
0.5 µs
1.5 µs
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
Test 4:
Test 5:
T
C
= +25 °C; I Cycle; t = 1.0 s
I
C
= 5.8 A dc; V
CE
= 24 V dc
I
C
= 0.9 A dc; V
CE
= 45 V dc
I
C
= 30 A dc; V
CE
= 4.67 V dc
I
C
= 0.19 A dc; V
CE
= 90 V dc 2N5671
I
C
= 0.11 A dc; V
CE
= 120 V dc 2N5672
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
2N5671 & 2N5672
NPN High Power Silicon Transistor
Rev. V2
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4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
info@vptcomponents.com
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