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SRAF1050C0G

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
产品类别分立半导体    二极管   
文件大小210KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 全文预览

SRAF1050C0G概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

SRAF1050C0G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明ITO-220AC, 3/2 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW POWER LOSS, UL RECOGNIZED
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.7 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流200 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压50 V
最大反向电流500 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

文档预览

下载PDF文档
SRAF1020 thru SRAF10150
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Isolated Schottky Barrier Rectifiers
MECHANICAL DATA
Case:
ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7 g (approximately)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 10 A
Maximum reverse current @ Rated V
R
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
dV/dt
R
θJC
T
J
T
STG
- 55 to +125
- 55 to +150
15
-
10000
4
- 55 to +150
10
SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF
1020
20
14
20
1030
30
21
30
1040
40
28
40
1050
50
35
50
10
200
0.70
0.85
0.1
-
5
V/μs
O
1060
60
42
60
1090 10100 10150
90
63
90
100
70
100
150
105
150
UNIT
V
V
V
A
A
0.95
V
mA
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
C
C
Document Number: DS_D1309009
Version: G13

 
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