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SRAF1030D0

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN
产品类别分立半导体    二极管   
文件大小241KB,共3页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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SRAF1030D0概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 30V V(RRM), Silicon, TO-220AC, ITO-220AC, 3/2 PIN

SRAF1030D0规格参数

参数名称属性值
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS, UL RECOGNIZED
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.55 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流200 A
元件数量1
相数1
端子数量2
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压30 V
最大反向电流500 µA
表面贴装NO
技术SCHOTTKY
端子形式THROUGH-HOLE
端子位置SINGLE

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creat by art
10.0AMPS. Isolated Schottky Barrier Rectifiers
ITO-220AC
Features
UL Recognized Flie # E-326243
Isolated Plastic package.
Low power loss, High efficiency.
High current capability, Low VF.
High reliability
High surge current capability.
Epitaxial construction.
Guard-ring for transient protection.
For use in low voltage, high frequency
inverter, free wheeling, and polarity
protection application
Green compound with suffix "G" on packing
code & prefix "G" on datecode.
SRAF1020 - SRAF10150
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free.Solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10 seconds /.25", (6.35mm) from case.
Weight: 1.73 grams
Mounting torque: 5 in - 1bs. Max.
Ordering Information(example)
Part No.
SRAF1020
Package
ITO-220AC
Packing
50 / TUBE
Packing
code
D0
Green Compound
Packing code
D0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 10 A
Maximum D.C. Reverse
Current at Rated DC
Blocking Voltage
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note1: Pulse Test: 300us Pulse Width, 1% Duty cycle
@ T
A
=25
@ T
A
=100
@ T
A
=125℃
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF
1020 1030 1040 1050 1060 1090 1010 1015
20
30
40
50
60
90
100 150
14
20
21
30
28
40
35
50
10
200
0.55
0.5
0.70
0.85
0.1
10
-
280
4
- 65 to + 125
- 65 to + 150
- 65 to + 150
-
5
165
0.95
42
60
63
90
70
100
105
150
Units
V
V
V
A
A
V
mA
mA
mA
pF
O
I
R
Cj
R
θJC
T
J
T
STG
15
420
Typical Junction Capacitance (Note 2)
C/W
O
O
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E12

 
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