Micro Commercial Components
MCC
TM
Micro Commercial Components Corp.
Products End of Life Notification
Issue
date: Oct-20
th
-2008
Last Buy Date :
Dec
-
31
th
-2008
Description and Purpose:
MCC has undergone a review of its core business and products , and
determined to discontinue below products:
Discontinued Devices
TSMBJ1024C
TSMBJ1022C
TSMBJ1018C
TSMBJ1016C
Possible Replacements
None
None
None
None
TSMBJ1012C
TSMBJ1010C
TSMBJ1009C-130
TSMBJ1007C
TSMBJ1006C
TSMBJ1005C-072
TSMBJ1005C-064
TSMBJ0524C
None
None
None
None
None
None
None
None
TSMBJ0522C
None
TSMBJ0518C
TSMBJ0516C
TSMBJ0512C
TSMBJ0510C
TSMBJ0509C-130
None
None
None
None
None
www.mccsemi.com
Micro Commercial Components
MCC
TM
Discontinued Devices
TSMBJ0507C
TSMBJ0506C
TSMBJ0505C-072
TSMBJ0505C-064
Possible Replacements
None
None
None
None
TSMBJ0324C
TSMBJ0322C
TSMBJ0318C
TSMBJ0316C
TSMBJ0312C
TSMBJ0310C
TSMBJ0309C-130
TSMBJ0307C
None
None
None
None
None
None
None
None
TSMBJ0306C
None
TSMBJ0305C-072
TSMBJ0305C-064
None
None
www.mccsemi.com
MCC
Micro Commercial Components
TM
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
TSMBJ0309C-130
Features
•
•
•
•
•
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 50A@10/1000us or 150A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V -0
Transient Voltage
Protection Device
120 Volts
DO-214AA
(SMB)
H
Mechanical Data
•
•
•
Case : Molded plastic
Polarity : None cathode band denotes
Approx Weight : 0.093grams
J
Maximum Ratings
Characteristic
Non-repetitive peak
impulse current
Non-repetitive peak
On-state current
Operating temperature
range
Junction and storage
temperature range
Symbol
I
PP
I
TSM
T
OP
T
J
, T
STG
Value
50A
20A
-40~125
o
C
-55~150 C
DIM
A
B
C
D
E
F
G
H
J
Unit
A
10/1000us
8.3ms, one-half
cycle
E
F
G
DIMENSIONS
C
D
B
o
Thermal Resistance
Characteristic
Thermal Resistance
junction to lead
Thermal Resistance
junction to ambient
Typical positive
temperature
coefficient for
breakdown voltage
Symbol
R
q
JL
R
q
JA
INCHES
MIN
.078
.077
.002
---
.030
.065
.205
.160
.130
MAX
.096
.083
.008
.02
.060
.091
.220
.180
.155
MM
MIN
2.00
1.96
.05
---
.76
1.65
5.21
4.06
3.30
MAX
2.44
2.10
.20
.51
1.52
2.32
5.59
4.57
3.94
NOTE
Value
30 C/W
120
o
C/W
o
o
Unit
SUGGESTED SOLDER
PAD LAYOUT
0.090"
On recommended
pad layout
0.085”
V
BR
/ T
J
0.1%/ C
0.070”
www.mccsemi.com
Revision:
4
200
5/01/10
TSMBJ0309C-130
MCC
Micro Commercial Components
Unless otherwise specified
TM
ELECTRICAL CHARACTERISTIC
@25
:
Parameter
On-State
Off-state
Rated
Breakover
Voltage Breakover Current
Leakage
Repetitive Off
Voltage
@I
T
=1.0A
-state
Voltage Current@V
DRM
Holding Current
Off-State
Capacitance
Symbol
Units
Limit
TSMBJ0309C-130
V
DRM
Volts
Max
120
I
DRM
uA
Max
5
V
BO
Volts
Max
160
V
T
Volts
Max
5
I
BO+
mA
Max
800
I
H-
mA
Min
150
C
J
pF
Typ.
60
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
200
150
100
60
60
50
Ipp ; PEAK PULSE CURRENT (%)
100
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
50
Half value
0
tr
tp
TIME
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
NOTE
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
NOTE: 1
I
BR
I
BO
I
H
I
DRM
I
PP
I
V
T
V
BR
V
DRM
V
BO
V
1. I H > ( V L/ R L
)
If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
www.mccsemi.com
Revision:
4
200
5/01/10
TSMBJ0309C-130
Fig.1 - Off-State Current v.s Junction Temperature
100
1.2
MCC
Micro Commercial Components
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
NORMALISED BREAKDOWN VOLTAGE
TM
I(DRM) , OFF-STATE CURRENT(uA)
10
V
BR
(T
J
)
1.15
V
BR
(T
J
=25 )
1
1.1
V
DRM
= 50V
0.1
1.05
1
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
0.9
-50
-25
0
25
50
75
100
125
150
175
Tj , JUNCTION TEMPERATURE ( )
Tj ; JUNCTION TEMPERATURE ( )
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
100
1.1
Fig.4 - On-State Current v.s On-State Voltage
NORMALISED BREAKOVER VOLTAGE
V
BO
(T
J
)
1.05
V
BO
(T
J
=25 )
I(T) ; ON-STATE CURRENT (A)
10
1
T
J
= 25
0.95
-50
-25
0
25
50
75
100
125
150
175
1
1
2
3
4
5
6
7
8
9
Tj ; JUNCTION TEMPERATURE ( )
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
2
1
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
NORMALISED HOLDING CURRENT
1.5
1
NORMALISED CAPACITANCE
C
O
(VR)
C
O
(VR = 1V)
Tj =25
f=1MHz
V
RMS
= 1V
0.5
I
H
(T
J
)
I
H
(T
J
=25 )
0
-50
-25
0
25
50
75
100
125
0.1
1
10
100
Tj ; JUNCTION TEMPERATURE ( )
VR ; REVERSE VOLTAGE (V)
www.mccsemi.com
Revision:
4
200
5/01/10
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