TB0640H - TB3500H
100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
Features
NEW PRODUCT
·
·
·
·
·
·
·
100A Peak Pulse Current @ 10/1000ms
400A Peak Pulse Current @ 8/20ms
58 - 320V Stand-Off Voltages
Oxide-Glass Passivated Junction
Bi-Directional Protection In a Single Device
High Off-State impedance and Low On-State
Voltage
Plastic Material: UL Flammability
Classification Rating 94V-0
UNDER DEVELOPMENT
A
Dim
A
B
C
D
SMB
Min
4.06
3.30
1.96
0.15
5.21
0.05
2.01
0.76
Max
4.57
3.94
2.21
0.31
5.59
0.20
2.62
1.52
B
C
D
E
F
G
Mechanical Data
·
·
·
·
·
Case: SMB, Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
Weight: 0.093 grams (approx.)
Marking: Date Code and Marking Code
G
H
F
E
H
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Non-Repetitive Peak Impulse Current
Non-Repetitive Peak On-State Current
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Ambient
Typical Positive Temperature Coefficient for Breakdown Voltage
@10/1000us
@8.3ms (one-half cycle)
Symbol
I
pp
I
TSM
T
j
T
STG
R
qJL
R
qJA
DVBR/DT
j
Value
100
50
-40 to +150
-55 to +150
20
100
0.1
Unit
A
A
°C
°C
°C/W
°C/W
%/°C
Maximum Rated Surge Waveform
I
PP
, PEAK PULSE CURRENT (%)
100
Waveform
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T, K20/K21
FCC Part 68
GR-1089-CORE
Ipp (A)
500
400
250
200
160
100
Peak Value (I
pp
)
t
r
= rise time to peak value
t
p
= decay time to half value
Half Value
50
0
0
t
r
t
p
TIME
DS30360 Rev. 1 - 1
1 of 4
TB0640H - TB3500H
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
On-State
Voltage
@ I
T
= 1A
V
T
(V)
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
NEW PRODUCT
Part Number
Rated
Repetitive
Off-State
Voltage
V
DRM
(V)
Off-State
Leakage
Current @
V
DRM
I
DRM
(uA)
5
5
5
5
5
5
5
5
5
5
5
Breakover
Voltage
V
BO
(V)
77
88
98
130
160
180
220
265
300
350
400
Breakover
Current
I
BO
Min
(mA)
50
50
50
50
50
50
50
50
50
50
50
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Holding Current
I
H
Min
(mA)
150
150
150
150
150
150
150
150
150
150
150
Max (mA)
800
800
800
800
800
800
800
800
800
800
800
Off-State
Capacitance
C
O
(pF)
200
200
200
120
120
120
120
80
80
80
80
Marking
Code
TB0640H
TB0720H
TB0900H
TB1100H
TB1300H
TB1500H
TB1800H
TB2300H
TB2600H
TB3100H
TB3500H
58
65
75
90
120
140
160
190
220
275
320
T064H
T072H
T090H
T110H
T130H
T150H
T180H
T230H
T260H
T310H
T350H
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
Stand-off Voltage
Parameter
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
NOTE: 1
Notes:
1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
I
I
PP
I
BO
I
H
I
BR
I
DRM
V
T
V
BR
V
DRM
V
BO
V
UNDER DEVELOPMENT
DS30360 Rev. 1 - 1
2 of 4
TB0640H - TB3500H
100
NORMALIZED BREAKDOWN VOLTAGE
1.2
1.15
NEW PRODUCT
I
(DRM)
, OFF-STATE CURRENT (uA)
10
V
BR
= (T
J
)
V
BR
= (T
J
= 25°C)
1.1
1.05
1
1
0.1
V
DRM
= 50V
0.01
0.95
0.9
0.001
-25
-50
-25
0
25
50
75
100 125 150 175
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 1 Off-State Current vs. Junction Temperature
T
J
, JUNCTION
TEMPERATURE (°C)
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Temperature
1.1
100
NORMALIZED BREAKDOWN VOLTAGE
1.05
V
BO
= (T
J
= 25°C)
I
T
, ON-STATE CURRENT (A)
V
BO
= (T
J
)
10
1
T
j
= 25°C
0.95
-50 -25
0
25
50
75
100 125 150 175
1
1
1.5
2
2.5
3
3.5
4
4.5
5
V
T
, ON-STATE VOLTAGE (V)
Fig. 4 On-State Current vs. On-State Voltage
1
T , JUNCTION TEMPERATURE (ºC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Temperature
1.4
1.3
NORMALIZED HOLDING CURRENT
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
-50
I
H
= (T
J
)
I
H
= (T
J
= 25°C)
NORMALIZED CAPACITANCE
1.2
C
O
= (V
R
)
C
O
= (V
R
= 1V)
T
j
= 25°C
f = 1 Mhz
V
RMS
= 1V
-25
0
25
50
75
0.1
100
125
1
10
100
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 Relative Variation of Holding Current vs.
Junction Temperature
V
R
, REVERSE VOLTAGE (V)
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Voltage Bias
UNDER DEVELOPMENT
DS30360 Rev. 1 - 1
3 of 4
TB0640H - TB3500H
Ordering Information
(Note 3)
Packaging
SMA
Shipping
5000/Tape & Reel
NEW PRODUCT
Device
TB0640H-TB3500H
Notes:
3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
XXXXX
Date Code Key
Year
Code
1998
8
1999
9
2000
0
2001
1
XXX = Product Type Marking Code
YWW = Date Code Marking
Y = Year ex: N = 2002
WW = Week
2002
2
2003
3
2004
4
UNDER DEVELOPMENT
DS30360 Rev. 1 - 1
4 of 4
TB0640H - TB3500H
嵌入式系统
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