UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
Features
Released;
RoHS Compliant
20 Jan 11
Package Outline
N-channel enhancement mode device
DMOS structure
Lower capacitances for broadband operation
Common source configuration
Lower noise floor
100 MHz to 500 MHz operation
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
DS
V
GS
I
DS
P
D
T
J
T
STG
θ
JC
Rating
65
20
1.4
14.4
200
-55 to +150
12.1
Units
V
V
A
W
°C
°C
°C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
100
300
500
Z
IN
(Ω)
15.0-j80.0
8.0-j43.0
4.0-j29.0
Z
LOAD
(Ω)
35.0+j55.0
29.0+j40.0
28.0+j29.0
V
DD
=28V, I
DQ
=50 mA, P
OUT
=100.0 W
Z
IN
is the series equivalent input impedance of the device
from gate to source.
Z
LOAD
is the optimum series equivalent load impedance as
measured from drain to ground
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
G
M
C
ISS
C
OSS
C
RSS
G
P
ŋ
D
VSWR-T
Min
65
-
-
2.0
80
-
-
-
10
50
-
Max
-
1.0
1.0
6.0
-
7.0
5
2.4
-
-
20:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
V
GS
= 0.0 V , I
DS
= 2.0 mA
V
GS
= 28.0 V , V
GS
= 0.0 V
V
GS
= 20.0 V , V
DS
= 0.0 V
V
DS
= 10.0 V , I
DS
= 10.0 mA
V
DS
= 10.0 V , I
DS
1.0 mA ,
∆
V
GS
= 1.0V, 80
μs
Pulse
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DS
= 28.0 V , F = 1.0 MHz
V
DD
= 28.0 V, I
DQ
= 50 mA, P
OUT
= 5.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 50 mA, P
OUT
= 5.0 W F =500 MHz
V
DD
= 28.0 V, I
DQ
= 50 mA, P
OUT
= 5.0 W F =500MHz
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
Typical Broadband Performance Curves
CAPACITANCES
VS
VOLTAGE
F=1.0MHz
C
ISS
Released;
RoHS Compliant
20 Jan 11
7
6
CAPACTANCES (pF)
5
4
3
2
1
0
5
8
POPWER OUTPUT (W)
7
6
5
4
3
2
1
0
5
POWER OUTPUT
VS
VOLTAGE
P
IN
=0.4 W I
DQ
=5.0 mA P
OUT
=500 W
C
OSS
C
RSS
10
15
V
DS
(V)
20
25
30
10
15
20
V
DS
(V)
25
30
35
GAIN
VS
FREQUENCY
V
DD
=28 V P
OUT
=5.0 W I
DQ
=50 mA
30
60
EFFICIENCY
VS
FREQUENCY
V
DD
=28V I
DQ
=50 mA P
OUT
=5.0 W
EFFICIENCY (W)
200
300
400
500
GAIN (dB)
20
55
10
50
0
100
45
100
200
300
400
500
FREQUENCY (MHz)
FREQUENCY (MHz)
7
POWER OUTPUT (W)
6
5
4
3
2
1
0
0.025
POWER OUTPUT
VS
POWER INPUT
V
DD
=28 V I
DQ
=50 mA
100MHz
300MHz
500MHz
0.05
0.1
0.15
0.2
2
0.25
0.3
POWER INPUT (W)
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
UF2805B
RF Power MOSFET Transistor
5W, 100-500 MHz, 28V
TEST FIXTURE SCHEMATIC
Released;
RoHS Compliant
20 Jan 11
TEST FIXTURE ASSEMBLY
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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