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FM5822B

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AA, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小26KB,共3页
制造商Rectron
标准  
下载文档 详细参数 全文预览

FM5822B概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AA, PLASTIC PACKAGE-2

FM5822B规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Rectron
零件包装代码DO-214AA
包装说明R-PDSO-C2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性LOW LEAKAGE CURRENT, METALLURGICALLY BONDED
应用GENERAL PURPOSE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
最大非重复峰值正向电流80 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流3 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)265
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

FM5822B文档预览

RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FM5820B
THRU
FM5822B
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes
FEATURES
*
*
*
*
*
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.098 gram
DO-214AA
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
0.083 (2.11)
0.077 (1.96)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Lead Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JA
C
J
T
J
T
STG
FM5820B
20
14
20
FM5821B
30
21
30
3.0
80
25
200
-55 to + 150
-55 to + 150
FM5822B
40
28
40
UNITS
Volts
Volts
Volts
Amps
Amps
0
C/ W
pF
0
0
C
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
@T
A
= 25 C
@T
A
= 100
o
C
o
SYMBOL
V
F
I
R
FM5820B
.475
FM5821B
.500
2.0
20
FM5822B
.525
UNITS
Volts
mAmps
mAmps
2002-11
NOTES : 1. Thermal Resistance (Junction to Ambient).
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( FM5820B THRU FM5822B )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
3
2
Single Phase
INSTANTANEOUS REVERSE CURRENT, (mA)
4
10
T
J
= 125
1.0
1
0
0
Half Wave 60Hz
P.C.B Mounted on
0.4X0.4"(10X10mm)
Resistive or
Inductive Load
copper pad areas
T
J
= 75
25
50
75
100
125
150
)
175
.1
LEAD TEMPERATURE, (
PEAK FORWARD SURGE CURRENT, (A)
FIG. 3 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
80
70
60
50
40
30
20
10
1
2
5
10
20
50
NUMBER OF CYCLE AT 60Hz
100
TL = 75
8.3ms Single Half Sine-Wave
(JEDEC Method)
.01
FM5820B
.001
0
FM5821B~FM5822B
20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
JUNCTION CAPACITANCE (pF)
1000
800
600
400
200
100
80
60
TJ = 25
1.0
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
20
10
.1
.4
1.0
4
10
REVERSE VOLTAGE, ( V )
40
FM5820B
FM5821B
FM5822B
.1
.2
.3
.4
.5
.6
.7
.8
.9
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
Mounting Pad Layout
0.106 MAX.
(2.69 MAX.)
0.083 MIN.
(2.10 MIN.)
0.050 MIN.
(1.27 MIN.)
0.220 REF
Dimensions in inches and (millimeters)
RECTRON

 
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