MASW-004103-1365
HMIC
TM
Silicon PIN Diode SP4T Switch
50 MHz - 20 GHz
Features
•
•
•
•
•
•
•
•
•
•
•
Specified from 50 MHz to 20 GHz
Usable up to 26 GHz
Low Insertion Loss
High Isolation
Low Parasitic Capacitance and Inductance
RoHS Compliant Surmount™ Package
Rugged, Fully Monolithic
Glass Encapsulated Construction
Up to +38 dBm C.W. Power Handling
1
@ +25°C
Silicon Nitride Passivation
Polymer Scratch Protection
Rev. V4
Functional Schematic
Description
The MASW-004103-1365 is a Surmount™
broadband monolithic SP4T switch using series and
shunt connected silicon PIN diodes. This part is
designed for use as a moderate signal, high
performance switch in applications up to 20 GHz.
This Surface Mount
chipscale configuration is
optimized for broadband performance with minimal
associated parasitics usually associated with hybrid
MIC designs incorporating beam lead and PIN
diodes that require chip and wire assembly.
The MASW-004103-1365 is fabricated using M/A-
COM Technology Solutions patented HMIC™
(Heterolithic Microwave Integrated Circuit) process,
US Patent 5,268,310. This process allows the
incorporation of silicon pedestals that form series
and shunt diodes or vias by imbedding them in low
loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and
glass gives HMIC devices low loss and high isolation
performance through low millimeter frequencies.
Selective backside metalization is applied producing
a Surface Mount device. The topside is fully
encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact
protection.
These protective coatings prevent
damage to the junction and the anode airbridge
during handling and assembly.
1.
1
Power Handling Testing performed @ 2GHz
J3
J4
J2
J1
Pin Configuration
2
Pin
J1
J2
Function
RFC
RF1
2
J5
Ordering Information
J3
J4
J5
2.
RF2
RF3
RF4
The exposed pad centered on the chip bottom must be
connected to RF and DC ground.
Ordering Information
Part Number
MASW-004103-13650G
MASW-004103-13655P
MASW-004103-13650P
MASW-004103-001SMB
Package
50 piece gel pack
500 piece reel
3000 piece reel
Sample Test Board
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-004103-1365
HMIC
TM
Silicon PIN Diode SP4T Switch
50 MHz - 20 GHz
Electrical Specifications: T
A
= 25°C, P
IN
= 0 dBm, Z
0
= 50
Ω,
20mA/-10V
Parameter
Insertion Loss
Conditions
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
6 GHz
13 GHz
20 GHz
2 GHz
0.5 GHz, 5 MHz Spacing, +20dBm
1 GHz, 10 MHz Spacing, +20dBm
2 GHz, 10 MHz Spacing, +20dBm
Units
dB
Min.
—
—
—
48
38
29
17
13
12
—
—
—
—
—
—
—
—
—
Typ.
0.5
0.8
1.2
51
39
32
21
17
16
53.5
41.5
31.5
36
60
63
64
20
—
Max.
0.6
1.0
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
80
Rev. V4
Isolation
dB
Input Return Loss
dB
Output to Output Isolation
dB
Input 0.1dB Compression Point
IIP3
Switching Speed
3
Voltage Rating
4
3.
4.
dB
dBm
ns
V
Typical Switching Speed measured from 10% to 90 % of detected RF signal driven by TTL compatible drivers.
Maximum reverse leakage current in either the shunt or series PIN diodes shall be 0.5 uA maximum @ -80 volts.
Absolute Maximum Ratings
5,6
Parameter
Operating Temperature
Storage Temperature
Junction Temperature
Applied Reverse Voltage
RF CW Incident Power
Bias Current +25°C
Absolute Maximum
-65 °C to +125 °C
-65 °C to +150 °C
+175 °C
|-80 V|
38dBm CW @ 2GHz, +25°C
33dBm CW @ 20GHz, +25°C
± 50 mA
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
These devices are rated at Class 1A Human Body.
Proper ESD control techniques should be used
when handling these devices.
Max Operating Conditions for combination RF
Pwr, DC Bias, & Temp: 33dBm CW @ 20mA per
Diode @ +85ºC @ 2GHz
5.
6.
Exceeding any one or combination of these limits may cause
permanent damage to this device.
M/A-COM Tech does not recommend sustained operation
near these survivability limits.
2
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-004103-1365
HMIC
TM
Silicon PIN Diode SP4T Switch
50 MHz - 20 GHz
Typical Performance Curves
In s e rtio n L o s s @ 20 m A -1 0 V
R F In p u t to R F O u tp u ts (J 1 to J 2 , J 3 , J4 , J5 )
0 .0
J1
J1
J1
J1
TO
TO
TO
TO
J2
J3
J4
J5
Rev. V4
Is o la tio n @ 2 0 m A -1 0 V
R F In p u t to R F O u tp u ts (J 1 to J 2 , J 3 , J4 , J5 )
0
J1
J1
J1
J1
TO
TO
TO
TO
J2
J3
J4
J5
-2 0
-0 .5
Insertion Loss (dB)
Isolation (dB)
-4 0
-1 .0
-6 0
-1 .5
-8 0
-2 .0
0
5
10
15
20
25
30
-1 0 0
0
5
10
15
20
25
30
F re q u en c y (G H z )
F re q u en c y (G H z )
In p u t R e tu rn L o s s @ 2 0 m A -1 0 V
R F In p u t to R F O u tp u ts (J 1 to J 2 , J 3 , J4 , J5 )
0
J1
J1
J1
J1
TO
TO
TO
TO
J2
J3
J4
J5
O u tp u t R e tu rn L o s s @ 20 m A -10 V
R F In p u t to R F O u tp u ts (J 1 to J 2 , J 3 , J4 , J5 )
0
J1
J1
J1
J1
TO
TO
TO
TO
J2
J3
J4
J5
-2 0
Output Return Loss (dB)
Input Return Loss (dB)
-1 0
-1 0
-2 0
-3 0
-3 0
-4 0
0
5
10
15
20
25
30
-4 0
0
5
10
15
20
25
30
F re q u en c y (G H z )
F re q u en c y (G H z )
O u tp u t to O u tp u t Is o la tio n @ 2 0 m A , -1 0 V
J 2 to J 3 a n d J 4 to J 5
0
J2 T O J 3
12
10
Input Power (Watts)
8
MASW-004103-1365 Maximum Input Power Curve
Baseplate Temperature fixed @ 25degC
Output to Output Isolation (dB)
J4 T O J 5
-2 0
2GHz, 6.4W
6
4
2
20GHz, 2W
10GHz, 3.1W
-4 0
-6 0
0
-8 0
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Insertion Loss (dB)
3
F re q u en c y (G H z )
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-004103-1365
HMIC
TM
Silicon PIN Diode SP4T Switch
50 MHz - 20 GHz
Bias Control
Optimal operation of the MASW-004103-1365 is achieved by simultaneous application of negative DC voltage
and current to the low loss switching arm and positive DC voltage and current to the remaining switching arms
as shown in the applications circuit below. DC return is achieved via R2 on the RFC path.
In the low loss state, the series diode must be forward biased with current and the shunt diode reverse biased
with voltage. In the isolated arm, the shunt diode is forward biased with current and the series diode is reverse
biased with voltage.
Rev. V4
Driver Connections
Control Level
(DC Currents and Voltages)
B2
-15V at -20mA
7
6V at +20mA
6V at +20mA
6V at +20mA
B3
6V at +20mA
-15V at -20mA
6V at +20mA
6V at +20mA
7
Condition
of RF
Output
B5
6V at +20mA
6V at +20mA
7
Condition
of RF
Output
J1-J3
Isolation
Low Loss
Isolation
Isolation
Condition
of RF
Output
J1-J4
Isolation
Isolation
Low Loss
Isolation
Condition
of RF
Output
J1-J5
Isolation
Isolation
Isolation
Low Loss
B4
6v at +20mA
6V at +20mA
-15V at -20mA
6V at +20mA
J1-J2
Low Loss
Isolation
Isolation
Isolation
6V at +20mA
-15V at -20mA
7
7. The voltage applied to the off arm can vary as long as 20mA is applied through the shunt diode on the off arm.
Application Circuit
8,9,10,11,12
Example:
J1 to J2→ Low Loss
R1 = 250
Ω
R2 = 450Ω
B2 = -15V
B3, B4, B5 = 6V
4
Notes:
8. Assume Vf ~ 1V at 20mA
9. R1 = 5V / 0.02A = 250Ω; R2 = 9V / 0.02A = 450Ω
10. P
R1
= 0.02A x 0.02A x 250 = 0.1 W
11. P
R2
= 0.02A x 0.02A x 450 = 0.18 W
12. Inductors are bias RF chokes. The operating band width of a broad-band PIN diode switch is often dependent on the bias compo-
nents, particularly the RF bias chokes. It is suggested that the frequency response be checked with all the bias components attached
before installing the PIN diode.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
MASW-004103-1365
HMIC
TM
Silicon PIN Diode SP4T Switch
50 MHz - 20 GHz
Outline Drawing Footprint
Rev. V4
Units in µm
Backside
view shows the back metal that is the foot print of the chip and all dimension are +/-0.5um
Ground radius is 200um centered on the I/O Pad.
MASW-004103-1365
DIM
MIN
Width
Length
Thickness
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 •
Europe
Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
•
India
Tel: +91.80.43537383
•
China
Tel: +86.21.2407.1588
and/or prototype measurements. Commitment to develop is not guaranteed.
Visit www.macomtech.com for additional data sheets and product information.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
Inches
MAX
0.06417
0.08937
0.00591
MIN
1.580
2.220
0.100
0.06220
0.08740
0.00394
mm
MAX
1.630
2.270
0.150
NXP MCU
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