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IDT70V639S12PRF9

产品描述Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
产品类别存储    存储   
文件大小319KB,共23页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT70V639S12PRF9概述

Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128

IDT70V639S12PRF9规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
针数128
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
最长访问时间12 ns
JESD-30 代码R-PQFP-G128
JESD-609代码e0
长度20 mm
内存密度2359296 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量128
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX18
封装主体材料PLASTIC/EPOXY
封装代码LFQFP
封装形状RECTANGULAR
封装形式FLATPACK, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)240
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN LEAD
端子形式GULL WING
端子节距0.5 mm
端子位置QUAD
处于峰值回流温度下的最长时间20
宽度14 mm

文档预览

下载PDF文档
HIGH-SPEED 3.3V 128K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
IDT70V639S
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V639 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0 L
CE
1 L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
128K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
16L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
16R
A
0R
OE
L
CE
0L
CE
1L
R/W
L
BUSY
L
SEM
L
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0 R
CE
1 R
R/W
R
BUSY
R
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5621 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
OCTOBER 2004
DSC-5621/4
1
©2004 Integrated Device Technology, Inc.

IDT70V639S12PRF9相似产品对比

IDT70V639S12PRF9 IDT70V639S15PRF9 IDT70V639S10PRF9
描述 Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 Dual-Port SRAM, 128KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
是否无铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合
零件包装代码 QFP QFP QFP
包装说明 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128
针数 128 128 128
Reach Compliance Code compliant compliant compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 12 ns 15 ns 10 ns
JESD-30 代码 R-PQFP-G128 R-PQFP-G128 R-PQFP-G128
JESD-609代码 e0 e0 e0
长度 20 mm 20 mm 20 mm
内存密度 2359296 bit 2359296 bit 2359296 bit
内存集成电路类型 DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
内存宽度 18 18 18
湿度敏感等级 3 3 3
功能数量 1 1 1
端子数量 128 128 128
字数 131072 words 131072 words 131072 words
字数代码 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C
组织 128KX18 128KX18 128KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFQFP LFQFP LFQFP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 240 240 240
认证状态 Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 3.45 V 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES
技术 CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN LEAD TIN LEAD TIN LEAD
端子形式 GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm
端子位置 QUAD QUAD QUAD
处于峰值回流温度下的最长时间 20 20 20
宽度 14 mm 14 mm 14 mm
Base Number Matches - 1 1

 
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