RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET,
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Central Semiconductor |
| Reach Compliance Code | not_compliant |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 35 V |
| FET 技术 | JUNCTION |
| 最大反馈电容 (Crss) | 1.2 pF |
| 最高频带 | VERY HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | DEPLETION MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| CMPF4416ATR13 | CMPF4416ABK | CMPF4416ABKLEADFREE | CMPF4416ATR13LEADFREE | CMPF4416ATR | |
|---|---|---|---|---|---|
| 描述 | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, |
| 是否无铅 | 含铅 | 含铅 | 不含铅 | 不含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 符合 | 符合 | 不符合 |
| 厂商名称 | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Reach Compliance Code | not_compliant | unknown | compliant | compliant | unknown |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 35 V | 35 V | 35 V | 35 V | 35 V |
| FET 技术 | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| 最大反馈电容 (Crss) | 1.2 pF | 1.2 pF | 1.2 pF | 1.2 pF | 1.2 pF |
| 最高频带 | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609代码 | e0 | e0 | e3 | e3 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | 260 | 260 | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | TIN LEAD | MATTE TIN (315) | MATTE TIN (315) | TIN LEAD |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 10 | 10 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 最大功率耗散 (Abs) | - | 0.35 W | 0.35 W | - | 0.35 W |
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