CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more
negative than any collector voltage in order to maintain isolation between transistors, and to provide for normal transistor action. To avoid
undesired coupling between transistors, the substrate terminal should be maintained at either DC or signal (AC) ground. A suitable bypass
capacitor can be used to establish a signal ground.
2.
θ
JA
is measured with the component mounted on an evaluation PC board in free air.
3. Care must be taken to avoid exceeding the maximum junction temperature. Use the total power dissipation (all transistors) and thermal
resistances to calculate the junction temperature.
Electrical Specifications
CA3146 Series
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3146
CA3146A
PARAMETER
SYMBOL
T
A
= 25
o
C
MN
TYP
MAX
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
Collector-to-Emitter
Breakdown Voltage
Collector-to-Substrate
Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-Cutoff Current
Collector-Cutoff Current
DC Forward-Current Transfer
Ratio
V
(BR)CBO
I
C
= 10µA, I
E
= 0
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CIO
V
(BR)EBO
I
CEO
I
CBO
h
FE
I
CI
= 10µA, I
B
= 0,
I
E
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
B
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10µA
Base-to-Emitter Voltage
Collector-to-Emitter
Saturation Voltage
V
BE
V
CE SAT
V
CE
= 3V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
-
-
-
-
1
2
3
3
3
4
5
40
30
40
5
-
-
-
30
-
0.63
-
72
56
72
7
See
Curve
0.002
85
100
90
0.73
0.33
-
-
-
-
5
100
-
-
-
0.83
-
50
40
50
5
-
-
-
30
-
0.63
-
72
56
72
7
See
Curve
0.002
85
100
90
0.73
0.33
-
-
-
-
5
100
-
-
-
0.83
-
V
V
V
V
µA
nA
-
-
-
V
V
DC CHARACTERISTICS FOR TRANSISTORS Q
1
AND Q
2
(As A Differential Amplifier)
Magnitude of Input Offset
Voltage |V
BE1
- V
BE2
|
Magnitude of Base-to-Emitter
Temperature Coefficient
|V
IO
|
∆V
BE
----------------
∆T
V
CE
= 5V, I
E
= 1mA
V
CE
= 5V, I
E
= 1mA
6, 7
-
-
-
0.48
1.9
5
-
-
-
0.48
1.9
5
-
mV
mV/
o
C
2
CA3146, CA3146A, CA3183, CA3183A
Electrical Specifications
CA3146 Series
(Continued)
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
-
CA3146
CA3146A
PARAMETER
Magnitude of V
IO
(V
BE1
- V
BE2
)
Temperature Coefficient
Magnitude of Input Offset Current
|I
IO1
- I
IO2
| (CA3146AE and
CA3146E Only)
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
SYMBOL
∆V
IO
-------------
-
∆T
I
IO
T
A
= 25
o
C
V
CE
= 5V,
I
C1
= I
C2
= 1mA
V
CE
= 5V,
I
C1
= I
C2
= 1mA
MN
-
TYP
1.1
MAX
-
MIN
-
TYP
1.1
MAX
-
UNITS
µV/
o
C
8
-
0.3
2
-
0.3
2
µA
NF
f = 1kHz, V
CE
= 5V,
I
C
= 100µA, Source
Resistance = 1kΩ
10
-
3.25
-
-
3.25
-
dB
Low-Frequency, Small-Signal
Equivalent-Circuit Characteristics:
Forward-Current Transfer
Ratio
Short-Circuit Input Impedance
Open-Circuit Output Impedance
Open-Circuit Reverse Voltage
Transfer Ratio
Admittance Characteristics:
Forward Transfer Admittance
Input Admittance
Output Admittance
Reverse Transfer
Admittance
Gain-Bandwidth Product
Emitter-to-Base Capacitance
Collector-to-Base Capacitance
Collector-to-Substrate
Capacitance
Y
FE
Y
IE
Y
OE
Y
RE
f
T
C
EB
C
CB
C
Cl
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
f = 1MHz, V
CE
= 5V,
I
C
= 1 mA
V
CE
= 5V, I
C
= 3mA
V
EB
= 5V, I
E
= 0
V
CB
= 5V, I
C
= 0
V
Cl
= 5V, I
C
= 0
13
14
15
16
17
18
18
18
300
-
-
-
-
-
-
31-
j1.5
0.3 +
j0.04
0.001
+ j0.03
See
Curve
500
0.70
0.37
2.2
-
-
-
-
300
-
-
-
-
-
-
-
-
-
31-j1.5
0.35 +
j0.04
0.001
+ j0.03
See
Curve
500
0.70
0.37
2.2
-
-
-
-
-
-
-
mS
mS
mS
mS
MHz
pF
pF
pF
h
FE
h
IE
h
OE
h
RE
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
f = 1kHz, V
CE
= 5V,
I
C
= 1mA
12
12
12
12
-
-
-
-
100
3.5
15.6
1.8 x
10
-4
-
-
-
-
-
-
-
-
100
2.7
15.6
1.8 x
10
-4
-
-
-
-
-
kΩ
µS
-
Electrical Specifications
CA3183 Series
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
CA3183
CA3183A
PARAMETER
SYMBOL
T
A
= 25
o
C
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector-to-Base
Breakdown Voltage
Collector-to-Emitter
Breakdown Voltage
Collector-to-Substrate
Breakdown Voltage
Emitter-to-Base
Breakdown Voltage
Collector-Cutoff Current
V
(BR)CBO
V
(BR)CEO
V
(BR)ClO
V
(BR)EBO
I
CEO
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
CI
= 100µA, I
B
= 0,
I
E
= 0
I
E
= 500µA, I
C
= 0
V
CE
= 10V, I
B
= 0
-
-
-
-
19
40
30
40
5
-
-
-
-
-
-
-
-
-
-
10
50
40
50
5
-
-
-
-
-
-
-
-
-
-
10
V
V
V
V
µA
3
CA3146, CA3146A, CA3183, CA3183A
Electrical Specifications
CA3183 Series
(Continued)
TEST CONDITIONS
TYPICAL
PERF.
CURVE
FIG. NO.
20
21, 22
-
23
24
CA3183
CA3183A
PARAMETER
Collector-Cutoff Current
DC Forward-Current
Transfer Ratio
Base-to-Emitter Voltage
Collector-to-Emitter
Saturation Voltage
SYMBOL
I
CBO
h
FE
T
A
= 25
o
C
V
CB
= 10V, I
E
= 0
V
CE
= 3V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
MIN
-
40
40
0.65
-
TYP
-
-
-
0.75
1.7
MAX
1
-
-
0.85
3.0
MIN
-
40
40
0.65
-
TYP
-
-
-
0.75
1.7
MAX
1
-
-
0.85
3.0
UNITS
µA
-
-
V
V
V
BE
V
CE SAT
(Note 3)
V
CE
= 3V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
FOR TRANSISTORS Q
1
AND Q
2
(AS A DIFFERENTIAL AMPLIFIER)
Absolute Input Offset
Voltage
Absolute Input Offset
Current
|V
IO
|
|I
IO
|
V
CE
= 3V, I
C
= 1mA
V
CE
= 3V, I
C
= 1mA
25
26
-
-
0.47
0.78
5
2.5
-
-
0.47
0.78
5
2.5
mV
µA
Typical Performance Curves
10
3
COLLECTOR CUTOFF CURRENT (nA)
I
B
= 0
10
2
V
CE
= 10V
10
V
CE
= 5V
1
10
-1
10
-2
10
-3
0
25
50
75
DC Characteristics - CA3146 Series
10
2
COLLECTOR CUTOFF CURRENT (nA)
10
1
10
-1
10
-2
10
-3
10
-4
0
25
50
75
TEMPERATURE (
o
C)
100
125
I
E
= 0
V
CB
= 15
V
CB
= 10
V
CB
= 5
100
125
TEMPERATURE (
o
C)
FIGURE 1. I
CEO
vs TEMPERATURE FOR ANY TRANSISTOR
FIGURE 2. I
CBO
vs TEMPERATURE FOR ANY TRANSISTOR
DC FORWARD CURRENT TRANSFER RATIO
160
140
120
100
V
CE
= 5V
BASE TO EMITTER VOLTAGE (V)
T
A
= 125
o
C
V
CE
= 5V
0.9
I
E
= 3mA
0.8
0.7
0.6
0.5
0.4
-75
-50
-25
0
25
50
75
100
125
TEMPERATURE (
o
C)
I
E
= 1mA
25
o
C
80
60
-55
o
C
40
20
0.01
0.1
1
10
COLLECTOR CURRENT (mA)
FIGURE 3. h
FE
vs I
C
FOR ANY TRANSISTOR
FIGURE 4. V
BE
vs TEMPERATURE FOR ANY TRANSISTOR
4
CA3146, CA3146A, CA3183, CA3183A
Typical Performance Curves
T
A
= 25
o
C
1.50
COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
1.25
1.0
h
FE
= 10
0.75
0.50
0.25
OFFSET VOLTAGE (mV)
DC Characteristics - CA3146 Series
(Continued)
5
V
CE
= 5V
4
3
2
0.75
0.50
0.25
0
-75
I
E
= 0.1mA
I
E
= 1mA
I
E
= 10mA
0
10
20
30
40
-50
-25
0
25
50
75
100
125
COLLECTOR CURRENT (mA)
TEMPERATURE (
o
C)
FIGURE 5. V
CE SAT
vs I
C
FOR ANY TRANSISTOR
FIGURE 6. V
IO
vs TEMPERATURE FOR Q
1
AND Q
2
BASE TO EMITTER VOLTAGE (V)
V
CE
= 5V
T
A
= 25
o
C
3
INPUT OFFSET VOLTAGE Q
1
AND Q
2
(mV)
0.8
10
INPUT OFFSET CURRENT (µA)
V
CE
= 5V
T
A
= 25
o
C
0.7
1.0
0.6
2
0.1
0.5
|V
BE1
- V
BE2
|
0.4
0.01
1
0
0.1
1.0
10
EMITTER CURRENT (mA)
0.01
0.01
0.1
1.0
10
COLLECTOR CURRENT (mA)
FIGURE 7. V
BE
AND V
IO
vs I
E
FOR Q
1
AND Q
2
FIGURE 8. I
IO
vs I
C
FOR Q
1
AND Q
2
Typical Performance Curves
V
CE
= 5V
R
S
= 500Ω
T
A
= 25
o
C
Dynamic Characteristics (For Any Transistor) - CA3146 Series
Microchip MCU
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