TO-92 Plastic-Encapsulate Transistors
C1815
FEATURES
Power dissipation
P
CM:
0.4
W (Tamb=25℃)
TRANSISTOR (NPN)
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
0.15
A
I
CM:
Collector-base voltage
60
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
1 2 3
unless otherwise specified)
Test
conditions
MIN
60
50
5
0.1
0.1
0.1
70
700
0.25
1
V
V
TYP
MAX
UNIT
V
V
V
Ic= 100
µ
A, I
E
=0
Ic= 0. 1 mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
= 60V, I
E
=0
V
CE
= 50V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V, I
C
= 2mA
I
C
= 100mA, I
B
= 10 mA
I
C
= 100 mA, I
B
= 10mA
V
CE
= 10 V, I
C
= 1mA
f=
30MHz
µ
A
µ
A
µ
A
Transition frequency
f
T
80
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
O
70-140
Y
120-240
GR
200-400
BL
350-700
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