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BYT28B-300-E3/45

产品描述DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
产品类别分立半导体    二极管   
文件大小145KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准  
下载文档 详细参数 选型对比 全文预览

BYT28B-300-E3/45概述

DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYT28B-300-E3/45规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码D2PAK
包装说明R-PSSO-G2
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用EFFICIENCY
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.4 V
JEDEC-95代码TO-263AB
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流60 A
元件数量2
相数1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)245
认证状态Not Qualified
最大重复峰值反向电压300 V
最大反向电流10 µA
最大反向恢复时间0.05 µs
反向测试电压300 V
表面贴装YES
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间30

BYT28B-300-E3/45文档预览

UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
Dual Common-Cathode Ultrafast Soft Recovery Rectifier
TO-220AB
ITO-220AB
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
2
BYT28, UG10 Series
PIN 1
PIN 3
PIN 2
CASE
3
1
2
3
1
PIN 1
PIN 3
PIN 2
BYT28F, UGF10 Series
TO-263AB
K
2
1
BYT28B, UGB10 Series
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
5Ax2
300 V, 400 V
60 A
35 ns
1.05 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
total device
per diode
SYMBOL
V
RRM
V
RWM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
BYT28-300
UG10FCT
300
300
210
300
10
5.0
60
- 40 to + 150
1500
BYT28-400
UG10GCT
400
400
280
400
V
A
A
°C
V
UNIT
V
V
Document Number: 88552
Revision: 06-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
(1)
Maximum reverse current per
diode at V
RRM
Maximum reverse recovery
time per diode
Maximum reverse recovery
time per diode
Maximum reverse recovery
current per diode
Maximum stored
charge per diode
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
I
F
= 5 A,
I
F
= 10 A
I
F
= 5 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
I
F
= 1.0 A, dI/dt = 100 A/µs, V
R
= 30 V,
I
rr
= 0.1 I
RM
I
F
= 5 A, dI/dt = 50 A/µs, V
R
= 30 V,
T
C
= 100 °C
I
F
= 2 A, dI/dt = 20 A/µs, V
R
= 30 V,
I
rr
= 0.1 I
RM
SYMBOL
V
F
VALUE
1.30
1.40
1.05
10
200
35
50
3.0
50
UNIT
V
I
R
t
rr
t
rr
I
RM
Q
rr
µA
ns
ns
A
nC
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance junction to case per diode
SYMBOL
R
θJC
BYT28
UG10
4.5
BYT28F
UGF10
6.7
BYT28B
UGB10
4.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
Note:
(1) Automotive grade AEC Q101 qualified
PREFERRED P/N
BYT28-400-E3/45
BYT28F-400-E3/45
BYT28B-400-E3/45
BYT28B-400-E3/81
BYT28-400HE3/45
(1)
BYT28F-400HE3/45
(1)
BYT28B-400HE3/45
(1)
BYT28B-400HE3/81
(1)
UNIT WEIGHT (g)
1.80
1.95
1.77
1.77
1.80
1.95
1.77
1.77
PACKAGE CODE
45
45
45
81
45
45
45
81
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88552
Revision: 06-Nov-07
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
15
Resistive or Inductive Load
1000
Instantaneous Reverse Current (µA)
Average Forward Current (A)
100
T
J
= 125 °C
T
J
= 100 °C
10
10
5
1.0
T
J
= 25 °C
0.1
0
0
50
100
150
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 1. Forward Current Derating Curve
Figure 4. Typical Reverse Characteristics Per Diode
Peak Forward Surge Current (A)
T
C
= 105 °C
8.3
ms Single Half Sine-Wave
Stored Charge/Reverse Recovery Time
(nC/ns)
100
120
100
at 5 A, 50 A/µs
80
at 2 A, 20 A/µs
60
at 5 A, 50 A/µs
40
at 1 A, 100 A/µs
10
20
at 2 A, 20 A/µs
0
25
50
75
100
t
rr
Q
rr
125
1
1
10
100
Number
of Cycles at 60 Hz
Junction Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Reverse Switching Characteristics Per Diode
100
100
Pulse
Width
= 300
µs
1
%
Duty Cycle
T
J
= 125 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
1.0
T
J
= 100 °C
T
J
= 125 °C
T
J
= 25 °C
Junction Capacitance (pF)
1.6
1.8
10
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88552
Revision: 06-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
PIN
2
1
2
3
7° REF.
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.191 (4.85)
0.171 (4.35)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88552
Revision: 06-Nov-07
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000

BYT28B-300-E3/45相似产品对比

BYT28B-300-E3/45 BYT28B-300-HE3/81
描述 DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Vishay(威世) Vishay(威世)
零件包装代码 D2PAK D2PAK
包装说明 R-PSSO-G2 ROHS COMPLIANT, PLASTIC PACKAGE-3
针数 3 3
Reach Compliance Code unknown unknown
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