RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
参数名称 | 属性值 |
厂商名称 | Motorola ( NXP ) |
Reach Compliance Code | unknown |
外壳连接 | ISOLATED |
基于收集器的最大容量 | 275 pF |
集电极-发射极最大电压 | 16 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 5 |
最高频带 | VERY HIGH FREQUENCY BAND |
JESD-30 代码 | O-CXFM-F4 |
元件数量 | 1 |
端子数量 | 4 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND |
封装形式 | FLANGE MOUNT |
极性/信道类型 | NPN |
功耗环境最大值 | 250 W |
最小功率增益 (Gp) | 5 dB |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | FLAT |
端子位置 | UNSPECIFIED |
晶体管应用 | AMPLIFIER |
晶体管元件材料 | SILICON |
MRF4070 | 2N6084 | 2N6080 | MRF264 | MRF262 | MRF247 | |
---|---|---|---|---|---|---|
描述 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-220AB | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 316-01, 4 PIN |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
基于收集器的最大容量 | 275 pF | 200 pF | 20 pF | 85 pF | 60 pF | 300 pF |
集电极-发射极最大电压 | 16 V | 18 V | 18 V | 16 V | 18 V | 18 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 5 | 5 | 5 | 20 | 5 | 10 |
最高频带 | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
JESD-30 代码 | O-CXFM-F4 | O-CRPM-F4 | O-CRPM-F4 | R-PSFM-T3 | R-PSFM-T3 | O-CXFM-F4 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 4 | 4 | 4 | 3 | 3 | 4 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED |
封装形状 | ROUND | ROUND | ROUND | RECTANGULAR | RECTANGULAR | ROUND |
封装形式 | FLANGE MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
最小功率增益 (Gp) | 5 dB | 4.5 dB | 12 dB | 5.2 dB | 6.3 dB | 7 dB |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | NO | NO | NO | YES |
端子形式 | FLAT | FLAT | FLAT | THROUGH-HOLE | THROUGH-HOLE | FLAT |
端子位置 | UNSPECIFIED | RADIAL | RADIAL | SINGLE | SINGLE | UNSPECIFIED |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
外壳连接 | ISOLATED | - | - | EMITTER | EMITTER | EMITTER |
最大集电极电流 (IC) | - | 7 A | 1 A | 6 A | 2.5 A | 20 A |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 |