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BY329X-1700S

产品描述DIODE 1700 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode
产品类别分立半导体    二极管   
文件大小33KB,共4页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
下载文档 详细参数 全文预览

BY329X-1700S概述

DIODE 1700 V, SILICON, RECTIFIER DIODE, PLASTIC PACKAGE-3, Rectifier Diode

BY329X-1700S规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称NXP(恩智浦)
包装说明R-PSFM-T2
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
应用HIGH VOLTAGE FAST SOFT RECOVERY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.5 V
JESD-30 代码R-PSFM-T2
最大非重复峰值正向电流60 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
认证状态Not Qualified
最大重复峰值反向电压1700 V
最大反向恢复时间0.17 µs
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE

BY329X-1700S文档预览

Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY329X-1700S
SYMBOL
QUICK REFERENCE DATA
V
R
= 1700 V
V
F
1.5 V
I
F(PEAK)
= 6 A
I
FSM
60 A
t
rr
170 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers and PC monitors.
The BY329X series is supplied in
the conventional leaded SOD113
package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD113
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(peak)
I
FRM
I
F(RMS)
I
FSM
T
stg
T
j
PARAMETER
Peak non repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Peak working forward current
Peak repetitive forward current
RMS forward current
Peak non-repetitive forward
current
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-40
-
MAX.
1700
1700
1300
6
6
14
10
60
150
150
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
f = 16 kHz
f = 64 kHz
t = 25
µs; δ
= 0.5; T
hs
91 ˚C
t = 10 ms
sinusoidal; T
j
= 150 ˚C prior to
surge; with reapplied V
RWM(max)
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from
both terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
BY329X-1700S
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 ˚C
V
R
= V
RWMmax
V
R
= V
RWMmax
; T
j
= 125 ˚C
MIN.
-
-
-
-
TYP.
1.35
1.2
-
-
MAX.
1.65
1.5
250
1.0
UNIT
V
V
µA
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
fr
t
fr
t
rr
Q
s
PARAMETER
Forward recovery voltage
Forward recovery time
Reverse recovery time
Reverse recovery charge
CONDITIONS
I
F
= 6.5 ; dI
F
/dt = 50 A/µs
I
F
= 6.5 A; dI
F
/dt = 50 A/µs; V
F
= 5 V
I
F
= 1 A; -dI
F
/dt = 50 A/µs; V
R
30 V
I
F
= 2 A; -dI
F
/dt = 20 A/µs; V
R
30 V
MIN.
-
-
-
-
TYP.
30
300
130
0.7
MAX.
40
320
170
1.0
UNIT
V
ns
ns
µC
I
F
I
dI
F
dt
F
trr
10%
tfr
VF
Qs
time
time
V
VF
5V
time
25%
100%
fr
I
R
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t
rr
and Q
s
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1700S
VCC
30
IF / A
Tj = 125 C
Tj = 25 C
BY329S17
Line output transformer
LY
20
10
Cf
deflection transistor
D1
Cs
0
typ
max
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.5. BY329-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Transient thermal impedance, Zth j-hs (K/W)
100
Maximum pulse width / us
V
BY459X-1500
VRRM
10
1
pulse
width tp
time
period T
10
0.1
0.01
P
D
t
p
D=
t
p
T
t
1
10
line frequency / kHz
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229F
10s
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.6. Transient thermal impedance Z
th
= f(t
p
)
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.2
3.0
10.3
max
BY329X-1700S
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
1.0 (2x)
0.6
2.54
5.08
0.5
2.5
0.9
0.7
Fig.7. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.200
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