DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BY428
Damper diode
Product specification
Supersedes data of May 1996
1996 Sep 26
Philips Semiconductors
Product specification
Damper diode
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
APPLICATIONS
•
Damper diode in high frequency
horizontal deflection circuits up to
64 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
BY428
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
,
a
MAM104
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
R
I
FWM
I
FRM
I
FSM
PARAMETER
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
repetitive peak forward current
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
T
tp
= 80
°C;
lead length = 10 mm;
see Fig.2
CONDITIONS
MIN.
−
−
−
−
−
−
MAX.
1500
1500
1400
4
8
50
V
V
V
A
A
A
UNIT
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
t
rr
t
fr
PARAMETER
forward voltage
reverse current
reverse recovery time
forward recovery time
CONDITIONS
I
F
= 4 A; T
j
= T
j max
; see Fig.3
I
F
= 4 A; see Fig.3
V
R
= V
Rmax
; T
j
= 150
°C
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.6
when switched to I
F
= 5 A in 50 ns;
T
j
= T
j max
; see Fig.7
MAX.
1.60
1.95
150
250
250
V
V
µA
ns
ns
UNIT
1996 Sep 26
2
Philips Semiconductors
Product specification
Damper diode
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
mounted as shown in Fig.5
Note
CONDITIONS
lead length = 10 mm
BY428
VALUE
25
75
40
UNIT
K/W
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.4.
For more information please refer to the
“General Part of associated Handbook”.
1996 Sep 26
3
Philips Semiconductors
Product specification
Damper diode
GRAPHICAL DATA
MBH409
BY428
handbook, halfpage
4
handbook, halfpage
8
MBH410
Ptot
(W)
3
IF
(A)
6
2
4
1
2
0
0
1
2
3
4
5
IFWM (A)
6
0
0
1
2
VF (V)
3
Solid line: basic high-voltage E/W modulator circuit; see Fig.8.
Dotted line: basic conventional horizontal deflection circuit; see Fig.9.
Curves include power dissipation due to switching losses.
Dotted line: T
j
= 150
°C.
Solid line: T
j
= 25
°C.
Fig.2
Maximum total power dissipation as a
function of working peak forward current.
Fig.3
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
handbook, halfpage
35
10
50
25
7
50
3 cm
2
copper
3 cm
2
copper
30
10
2
3
MGA200
MGA204
25.4
Dimensions in mm.
Dimensions in mm.
Fig.5
Fig.4 Device mounted on a printed-circuit board.
Mounting with additional printed-circuit
board for heat sink purposes.
1996 Sep 26
4
Philips Semiconductors
Product specification
Damper diode
BY428
handbook, full pagewidth
DUT
+
IF
(A)
0.5
1
Ω
t rr
10
Ω
25 V
50
Ω
0
0.25
0.5
IR
(A)
1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; t
r
≤
7 ns.
Source impedance: 50
Ω;
t
r
≤
15 ns.
Fig.6 Test circuit and reverse recovery time waveform and definition.
handbook, halfpage
MGD600
VF
90%
100%
t fr
IF
t
10%
t
Fig.7 Forward recovery time definition.
1996 Sep 26
5
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