Datasheet> 器件分类 > 分立半导体> 二极管> BY500-600(Z)

文档预览

BY500-600(Z): 产品描述Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-27,; 产品类别分立半导体二极管; 文件大小58KB，共2页; 制造商Galaxy Semi-Conductor Co Ltd; 标准

下载文档详细参数选型对比全文预览

BY500-600(Z)概述

Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-27,

BY500-600(Z)规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Galaxy Semi-Conductor Co Ltd
包装说明	O-PALF-W2
Reach Compliance Code	unknown
ECCN代码	EAR99
应用	FAST RECOVERY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1.3 V
JEDEC-95代码	DO-27
JESD-30 代码	O-PALF-W2
最大非重复峰值正向电流	200 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	5 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	600 V
最大反向电流	10 µA
最大反向恢复时间	0.2 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

文档预览

下载PDF文档

全文
预览

FEATURES

Low cost

GALAXY ELECTRICAL

BY500-100(Z)---BY500-1000(Z)

VOLTAGE RANGE: 100 --- 1000 V

CURRENT: 5.0 A

FAST RECOVERY RECTIFIER

DO - 27

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Freon,Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

MECHANICAL DATA

Case:JEDEC DO-27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight:0.041 ounces,1.15 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

BY500

-100

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

=75

BY500

-200

200

140

200

BY500

-400

400

280

400

5.0

BY500

-600

600

420

600

BY500

-800

800

560

800

BY500

-1000

1000

700

1000

UNITS

RRM

RMS

F(AV)

100

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

=125

FSM

200.0

Maximum instantaneous forw ard voltage

@ 5.0 A

Maximum reverse current

at rated DC blocking voltage

=25

=100

STG

1.3

10.0

1000.0

200

-55---- + 150

- 55---- + 150

Maximum reverse recovery time (Note1)

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

=0.5A, I

=1A, I

=0.25A.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient.

www.galaxycn.com

Document Number 0261038

GALAXY ELECTRICAL

BY500-600(Z)相似产品对比

	BY500-600(Z)	BY500-200(Z)	BY500-800(Z)	BY500-100(Z)	BY500-1000(Z)
描述	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 5A, 800V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-27,	Rectifier Diode, 1 Phase, 1 Element, 5A, 1000V V(RRM), Silicon, DO-27,
是否Rohs认证	符合	符合	符合	符合	符合
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JEDEC-95代码	DO-27	DO-27	DO-27	DO-27	DO-27
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	200 A	200 A	200 A	200 A	200 A
元件数量	1	1	1	1	1
相数	1	1	1	1	1
端子数量	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	5 A	5 A	5 A	5 A	5 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	600 V	200 V	800 V	100 V	1000 V
最大反向电流	10 µA	10 µA	10 µA	10 µA	10 µA
最大反向恢复时间	0.2 µs	0.2 µs	0.2 µs	0.2 µs	0.2 µs
表面贴装	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
厂商名称	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd	-	Galaxy Semi-Conductor Co Ltd	Galaxy Semi-Conductor Co Ltd

BY500-600(Z)

BY500-600(Z)概述

BY500-600(Z)规格参数

文档预览

BY500-600(Z)相似产品对比

推荐资源