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BY9304

产品描述0.02A, 5600V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小103KB,共12页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
下载文档 详细参数 选型对比 全文预览

BY9304概述

0.02A, 5600V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2

BY9304规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称NXP(恩智浦)
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性LOW LEAKAGE CURRENT
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)10 V
JESD-30 代码O-PALF-W2
最大非重复峰值正向电流0.5 A
元件数量1
端子数量2
最高工作温度160 °C
最大输出电流0.02 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
最大重复峰值反向电压5600 V
最大反向恢复时间0.08 µs
表面贴装NO
技术AVALANCHE
端子形式WIRE
端子位置AXIAL

BY9304文档预览

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D350
BY9300 series
Fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of 1998 Jul 29
2000 Jan 10
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
FEATURES
Plastic package
Glass passivated
High maximum operating temperature
Low leakage current
Excellent stability
40% overvoltage allowed during 5 seconds
Guaranteed avalanche energy absorption capability
Very low reverse recovery time
Soft-recovery switching characteristics
Compact construction.
APPLICATIONS
For colour television and monitors up to 32 kHz
(indication)
High-voltage applications for:
– Multipliers
– Diode-split-transformers (FBTs).
MARKING
Cathode band colour codes.
TYPE NUMBER
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
PACKAGE CODE
SOD118A
SOD118A
SOD118A
SOD118B
SOD118B
SOD118B
SOD118B
SOD118B
white
white
white
white
white
white
white
white
OUTER BAND
DESCRIPTION
BY9300 series
Plastic package, using glass passivation and a high
temperature alloyed construction.
This package is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package should be used in an insulating medium such
as resin, oil or SF6 gas.
k
handbook, halfpage


a
MAM402
Fig.1 Simplified outline (SOD118A/B) and symbol.
INNER BAND
green
red
violet
orange
lilac
grey
brown
2000 Jan 10
2
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM1
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
V
RRM2
repetitive peak reverse voltage
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
V
RSM
non-repetitive peak reverse voltage
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
I
FSM
I
F(AV)
non-repetitive peak forward current
average forward current
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
I
FRM
2000 Jan 10
repetitive peak forward current
note 1
3
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge
averaged over any 20 ms period
max. 5 seconds
PARAMETER
repetitive peak reverse voltage
CONDITIONS
BY9300 series
MIN.
4
6
8
MAX.
UNIT
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
kV
A
10
12
14
16
18
5.6
8.4
11.2
14.0
16.8
19.6
22.4
25.2
5.6
8.4
11.2
14.0
16.8
19.6
22.4
25.2
0.5
20
10
5
5
5
5
5
5
500
mA
mA
mA
mA
mA
mA
mA
mA
mA
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
SYMBOL
T
stg
T
j
PARAMETER
storage temperature
junction temperature
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
Note
1. Withstands peak currents during flash-over in a picture tube.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
I
R
Q
r
reverse current
recovery charge
V
R
= V
RRM1
V
R
= V
RRM1
; T
j
= 120
°C
when switched from I
F
= 100 mA
to V
R
100 V and
dI
F
/dt =
−200
mA/µs
PARAMETER
forward voltage
CONDITIONS
I
F
= 10 mA
0.7
−65
−65
−65
−65
−65
−65
−65
−65
CONDITIONS
BY9300 series
MIN.
−65
MAX.
+175
+160
+160
+155
+150
+145
+140
+140
+135
UNIT
°C
°C
°C
°C
°C
°C
°C
°C
°C
TYP.
MAX.
10
14
20
24
30
34
40
44
1
3
V
V
V
V
V
V
V
V
UNIT
µA
µA
nC
t
rr
C
d
reverse recovery time
diode capacitance
BY9304
BY9306
BY9308
BY9310
BY9312
BY9314
BY9316
BY9318
when switched from I
F
= 2 mA to
I
R
= 4 mA; measured at I
R
= 1 mA
V
R
= 0; f = 1 MHz
1.20
0.80
0.60
0.50
0.40
0.35
0.30
0.25
4
80
ns
pF
pF
pF
pF
pF
pF
pF
pF
2000 Jan 10
Philips Semiconductors
Product specification
Fast high-voltage soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
20
MBK916
BY9300 series
handbook, halfpage
IF(AV)
(mA)
handbook, halfpage
10
MDA853
16
IF(AV)
(mA)
8
12
a = 1.57
8
a = 6.32
4
6
a = 6.32
4
1.57
2
0
0
40
80
120
160
200
Tamb (°C)
0
0
40
80
120
160
200
Tamb (°C)
BY9304.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application.
BY9306.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application.
Fig.2
Maximum permissible average forward
current as a function of ambient temperature.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature.
handbook, halfpage
5
MDA854
IF(AV)
handbook, halfpage
5
MDA859
(mA)
4
IF(AV)
(mA)
4
a = 6.32
a = 6.32
3
1.57
3
1.57
2
2
1
1
0
0
40
80
120
160
200
Tamb (°C)
0
0
40
80
120
160
200
Tamb (°C)
BY9308.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application.
BY9310.
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RWmax
; R
th j-a
120 K/W.
a = 1.57: half sinewave.
a = 6.32: line output transformer application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature.
Fig.5
Maximum permissible average forward
current as a function of ambient temperature.
2000 Jan 10
5

BY9304相似产品对比

BY9304 BY9306 BY9308 BY9310 BY9312 BY9314 BY9316 BY9318
描述 0.02A, 5600V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2 0.01A, 8400V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2 0.005A, 11200V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2 DIODE 0.005 A, 14000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2, Signal Diode DIODE 0.005 A, 16800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2, Signal Diode 0.005A, 19600V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2 0.005A, 22400V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2 DIODE 0.005 A, 25200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, PLASTIC PACKAGE-2, Signal Diode
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
包装说明 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
针数 2 2 2 2 2 2 2 2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 10 V 14 V 20 V 24 V 30 V 34 V 40 V 44 V
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
最大非重复峰值正向电流 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
元件数量 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最高工作温度 160 °C 160 °C 155 °C 150 °C 145 °C 140 °C 140 °C 135 °C
最大输出电流 0.02 A 0.01 A 0.005 A 0.005 A 0.005 A 0.005 A 0.005 A 0.005 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 5600 V 8400 V 11200 V 14000 V 16800 V 19600 V 22400 V 25200 V
最大反向恢复时间 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs 0.08 µs
表面贴装 NO NO NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

 
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