UNISONIC TECHNOLOGIES CO., LTD
80N08
Preliminary
Power MOSFET
N-CHANNEL 80V (D-S) MOSFET
DESCRIPTION
The UTC
80N08
is an N-channel MOSFET using UTC trench
technology. It can be used in applications, such as power supply
(secondary synchronous rectification), industrial and primary switch
etc.
FEATURES
* Trench FET Power MOSFETS Technology
* 100 % R
G
and UIS Tested
SYMBOL
D (2)
G (1)
S (3)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
80N08L-TA3-R
80N08G-TA3-R
Note: G: GND, D: Drain, S: Source
Package
TO-220
Pin Assignment
1
2
3
G
D
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-468.a
80N08
PARAMETER
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
J
= 25 °C, unless otherwise specified)
RATINGS
80
Continuous Drain Current (Note 1)
I
D
80
Pulsed Drain Current (Note 2)
I
D
,
pulse
320
Avalanche Energy, Single Pulse (Note 2)
E
AS
810
Gate Source Voltage (Note 3)
V
GS
±20
Power Dissipation
P
TOT
T
C
=25 °C
300
Junction Temperature
T
J
+150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
SYMBOL
TEST CONDITIONS
T
C
=25 °C, V
GS
=10 V
T
C
=100 °C, V
GS
=10 V (Note 2)
T
C
=25 °C
I
D
=80A
UNIT
A
A
mJ
V
W
°C
°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62
0.5
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
0.01
1
1
1
100
100
4.0
12
µA
nA
V
mΩ
pF
pF
pF
37
116
180
nC
nC
nC
V
ns
ns
ns
ns
A
V
ns
nC
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
2.1
3.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=80A
DYNAMIC PARAMETERS
(Note 2)
Input Capacitance
C
ISS
4700
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
1260
Reverse Transfer Capacitance
C
RSS
580
SWITCHING PARAMETERS
(Note 2)
Gate to Source Charge
Q
GS
25
V
DD
=60V, V
GS
=0~10V, I
D
=80A
Gate to Drain Charge
Q
GD
69
144
Total Gate Charge
Q
G
Gate Plateau Voltage
V
plateau
5.4
Turn-ON Delay Time
t
D(ON)
26
V
DD
=40V, R
G
=2.2Ω
Rise Time
t
R
50
I
D
=80A, V
GS
=10V
Turn-OFF Delay Time
t
D(OFF)
61
Fall-Time
t
F
30
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Maximum Body-Diode Continuous Current
T
C
=25°C (Note 2)
Pulsed Current
I
S, pulse
V
SD
I
F
=80A, V
GS
=0V, T
J
=25°C
0.9
Drain-Source Diode Forward Voltage (Note1)
Reverse Recovery Time (Note 2)
t
RR
I
F
= I
S
, dI
F
/dt=100A/µs
110
V
R
=40V
Reverse Recovery Charge (Note 2)
Q
RR
470
Note: 1. Current is limited by bondwire; with an
θ
JC
= 0.5K/W the chip is able to carry 132A at 25°C.
2. Defined by design. Not subject to production test.
3. Qualified at -20V and +20V.
I
D
=1mA, V
GS
=0V
80
V
DS
=75V, V
GS
=0V, T
J
=25°C
2
V
DS
=75V, V
GS
=0V, T
J
=125°C
V
DS
=0V, V
GS
=20V
80
320
1.3
140
590
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-468.a
80N08
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-468.a
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