70 Amps, 60 Volts N-CHANNEL POWER MOSFET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
| 零件包装代码 | D2PAK |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 4 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 600 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (ID) | 70 A |
| 最大漏源导通电阻 | 0.015 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB |
| JESD-30 代码 | R-PSSO-G2 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 280 A |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 70N06G-TQ2-R | 70N06 | 70N06G-TQ2-T | 70N06G-TA3-T | 70N06L-TQ2-T | 70N06L-TA3-T | 70N06G-T2Q-T | 70N06L-TQ2-R | 70N06_09 | 70N06L-T2Q-T | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET | 70 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | - | 符合 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - | - | - | UNISONIC TECHNOLOGIES CO.,LTD |
| 零件包装代码 | D2PAK | - | D2PAK | TO-220AB | D2PAK | TO-220AB | TO-262AA | D2PAK | - | TO-262AA |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | - | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | - | IN-LINE, R-PSIP-T3 |
| 针数 | 4 | - | 4 | 3 | 4 | 3 | 3 | 4 | - | 3 |
| Reach Compliance Code | compli | - | compli | compli | compli | compli | compli | compli | - | compli |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| 雪崩能效等级（Eas） | 600 mJ | - | 600 mJ | 600 mJ | 600 mJ | 600 mJ | 600 mJ | 600 mJ | - | 600 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V | - | 60 V |
| 最大漏极电流 (ID) | 70 A | - | 70 A | 70 A | 70 A | 70 A | 70 A | 70 A | - | 70 A |
| 最大漏源导通电阻 | 0.015 Ω | - | 0.015 Ω | 0.015 Ω | 0.015 Ω | 0.015 Ω | 0.015 Ω | 0.015 Ω | - | 0.015 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-263AB | - | TO-263AB | TO-220AB | TO-263AB | TO-220AB | TO-262AA | TO-263AB | - | TO-262AA |
| JESD-30 代码 | R-PSSO-G2 | - | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 | - | R-PSIP-T3 |
| 元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 | - | 1 |
| 端子数量 | 2 | - | 2 | 3 | 2 | 3 | 3 | 2 | - | 3 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | IN-LINE | SMALL OUTLINE | - | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 280 A | - | 280 A | 280 A | 280 A | 280 A | 280 A | 280 A | - | 280 A |
| 表面贴装 | YES | - | YES | NO | YES | NO | NO | YES | - | NO |
| 端子形式 | GULL WING | - | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - | THROUGH-HOLE |
| 端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | - | SILICON |
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