50 Amps, 60 Volts N-CHANNEL POWER MOSFET
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD |
| 零件包装代码 | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 480 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (Abs) (ID) | 50 A |
| 最大漏极电流 (ID) | 50 A |
| 最大漏源导通电阻 | 0.023 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 70 W |
| 最大脉冲漏极电流 (IDM) | 200 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 50N06L-TF3-T | 50N06 | 50N06L-TN3-R | 50N60G-TM3-T | 50N06G-TF3-T | 50N06L-TA3-T | 50N06_11 | 50N06G-TA3-T | 50N60L-TM3-T | 50N06G-TN3-R | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET | 50 Amps, 60 Volts N-CHANNEL POWER MOSFET |
| 是否Rohs认证 | 符合 | - | 符合 | - | 符合 | 符合 | - | 符合 | - | 符合 |
| 厂商名称 | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD | - | UNISONIC TECHNOLOGIES CO.,LTD |
| 零件包装代码 | TO-220AB | - | TO-252 | - | TO-220AB | TO-220AB | - | TO-220AB | - | TO-252 |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | - | LEAD FREE PACKAGE-3 | - | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | - | HALOGEN FREE PACKAGE-3 |
| 针数 | 3 | - | 4 | - | 3 | 3 | - | 3 | - | 4 |
| Reach Compliance Code | compli | - | compli | - | compli | compli | - | compli | - | compli |
| ECCN代码 | EAR99 | - | EAR99 | - | EAR99 | EAR99 | - | EAR99 | - | EAR99 |
| 雪崩能效等级（Eas） | 480 mJ | - | 480 mJ | - | 480 mJ | 480 mJ | - | 480 mJ | - | 480 mJ |
| 配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 60 V | - | 60 V | - | 60 V | 60 V | - | 60 V | - | 60 V |
| 最大漏极电流 (Abs) (ID) | 50 A | - | 50 A | - | 50 A | 50 A | - | 50 A | - | 50 A |
| 最大漏极电流 (ID) | 50 A | - | 50 A | - | 50 A | 50 A | - | 50 A | - | 50 A |
| 最大漏源导通电阻 | 0.023 Ω | - | 0.023 Ω | - | 0.023 Ω | 0.023 Ω | - | 0.023 Ω | - | 0.023 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | - | TO-252 | - | TO-220AB | TO-220AB | - | TO-220AB | - | TO-252 |
| JESD-30 代码 | R-PSFM-T3 | - | R-PSSO-G2 | - | R-PSFM-T3 | R-PSFM-T3 | - | R-PSFM-T3 | - | R-PSSO-G2 |
| 元件数量 | 1 | - | 1 | - | 1 | 1 | - | 1 | - | 1 |
| 端子数量 | 3 | - | 2 | - | 3 | 3 | - | 3 | - | 2 |
| 工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | - | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | - | 150 °C | - | 150 °C | 150 °C | - | 150 °C | - | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | - | SMALL OUTLINE | - | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | - | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | - | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | - | N-CHANNEL |
| 最大功率耗散 (Abs) | 70 W | - | 46 W | - | 70 W | 120 W | - | 120 W | - | 46 W |
| 最大脉冲漏极电流 (IDM) | 200 A | - | 200 A | - | 200 A | 200 A | - | 200 A | - | 200 A |
| 认证状态 | Not Qualified | - | Not Qualified | - | Not Qualified | Not Qualified | - | Not Qualified | - | Not Qualified |
| 表面贴装 | NO | - | YES | - | NO | NO | - | NO | - | YES |
| 端子形式 | THROUGH-HOLE | - | GULL WING | - | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | - | GULL WING |
| 端子位置 | SINGLE | - | SINGLE | - | SINGLE | SINGLE | - | SINGLE | - | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | - | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | - | SWITCHING | - | SWITCHING | SWITCHING | - | SWITCHING | - | SWITCHING |
| 晶体管元件材料 | SILICON | - | SILICON | - | SILICON | SILICON | - | SILICON | - | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
