500V N-CHANNEL MOSFET
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
零件包装代码 | TO-220AB |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
针数 | 3 |
Reach Compliance Code | compli |
Is Samacsys | N |
雪崩能效等级(Eas) | 860 mJ |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 500 V |
最大漏极电流 (Abs) (ID) | 13 A |
最大漏极电流 (ID) | 13 A |
最大漏源导通电阻 | 0.48 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-220AB |
JESD-30 代码 | R-PSFM-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 48 W |
最大脉冲漏极电流 (IDM) | 52 A |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
13N50L-TF1-T | 13N50 | 13N50G-TF1-T | 13N50L-TA3-T | 13N50L-TF3-T | 13N50G-TA3-T | BUK7606-75B_15 | 13N50_10 | |
---|---|---|---|---|---|---|---|---|
描述 | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | 500V N-CHANNEL MOSFET | N-channel TrenchMOS standard level FET | 500V N-CHANNEL MOSFET |
是否Rohs认证 | 符合 | - | 符合 | 符合 | 符合 | 符合 | - | - |
零件包装代码 | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | - | - |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | - | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | TO-220, 3 PIN | - | - |
针数 | 3 | - | 3 | 3 | 3 | 3 | - | - |
Reach Compliance Code | compli | - | compli | compli | compli | compli | - | - |
Is Samacsys | N | - | N | N | N | N | - | - |
雪崩能效等级(Eas) | 860 mJ | - | 860 mJ | 860 mJ | 860 mJ | 972 mJ | - | - |
配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | - |
最小漏源击穿电压 | 500 V | - | 500 V | 500 V | 500 V | 500 V | - | - |
最大漏极电流 (Abs) (ID) | 13 A | - | 13 A | 13 A | 13 A | 13 A | - | - |
最大漏极电流 (ID) | 13 A | - | 13 A | 13 A | 13 A | 13 A | - | - |
最大漏源导通电阻 | 0.48 Ω | - | 0.48 Ω | 0.48 Ω | 0.48 Ω | 0.48 Ω | - | - |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - |
JEDEC-95代码 | TO-220AB | - | TO-220AB | TO-220AB | TO-220AB | TO-220AB | - | - |
JESD-30 代码 | R-PSFM-T3 | - | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | - | - |
元件数量 | 1 | - | 1 | 1 | 1 | 1 | - | - |
端子数量 | 3 | - | 3 | 3 | 3 | 3 | - | - |
工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - |
最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | - | - |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - |
封装形式 | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | - | - |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | - | - |
最大功率耗散 (Abs) | 48 W | - | 48 W | 168 W | 48 W | 168 W | - | - |
最大脉冲漏极电流 (IDM) | 52 A | - | 52 A | 52 A | 52 A | 52 A | - | - |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | - |
表面贴装 | NO | - | NO | NO | NO | NO | - | - |
端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | - |
端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | - | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - |
晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | - |
晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | - | - |
Base Number Matches | 1 | - | 1 | 1 | 1 | 1 | - | - |
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